SLVSFF1B December 2021 – December 2022 LM5123-Q1
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
When SS is greater than 1.5 V, the device enters deep sleep mode after at least 40 μs in OVP status. The device re-enters active mode if VOUT falls down below VOVP. During bypass operation, the loss, which is caused by the body diode of the high-side MOSFET, is minimized. See Section 8.4.1.5 for more information.