SLVSES8A October   2020  – December 2020 LM5127-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Device Enable (EN, VCC_HOLD)
      2. 8.3.2  Dual Input VCC Regulator (BIAS, VCCX, VCC)
      3. 8.3.3  Dual Input VDD Switch (VDD, VDDX)
      4. 8.3.4  Device Configuration and Light Load Switching Mode Selection (CFG/MODE)
      5. 8.3.5  Fixed or Adjustable Output Regulation Target (VOUT, FB)
      6. 8.3.6  Overvoltage Protection (VOUT, FB)
      7. 8.3.7  Power Good Indicator (PGOOD)
      8. 8.3.8  Programmable Switching Frequency (RT)
      9. 8.3.9  External Clock Synchronization (SYNC)
      10. 8.3.10 Programmable Spread Spectrum (DITHER)
      11. 8.3.11 Programmable Soft Start (SS)
      12. 8.3.12 Fast Re-start using VCC_HOLD (VCC_HOLD)
      13. 8.3.13 Transconductance Error Amplifier and PWM (COMP)
      14. 8.3.14 Current Sensing and Slope Compensation (CSA, CSB)
      15. 8.3.15 Constant Peak Current Limit (CSA, CSB)
      16. 8.3.16 Maximum Duty Cycle and Minimum Controllable On-time Limits (Boost)
      17. 8.3.17 Bypass Mode (Boost)
      18. 8.3.18 Minimum Controllable On-time and Minimum Controllable Off-time Limits (Buck)
      19. 8.3.19 Low Dropout Mode for Extended Minimum Input Voltage (Buck)
      20. 8.3.20 Programmable Hiccup Mode Overload Protection (RES)
      21. 8.3.21 MOSFET Drivers and Hiccup Mode Fault Protection (LO, HO, HB)
      22. 8.3.22 Battery Monitor (BMOUT, BMIN_FIX, BMIN_PRG)
      23. 8.3.23 Dual-phase Interleaved Configuration for High Current Supply (CFG)
      24. 8.3.24 Thermal Shutdown Protection
      25. 8.3.25 External VCCX Supply Reduces Power Dissipation
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device Status
        1. 8.4.1.1 Shutdown Mode
        2. 8.4.1.2 Configuration Mode
        3. 8.4.1.3 Active Mode
        4. 8.4.1.4 Sleep Mode
        5. 8.4.1.5 Deep Sleep Mode
          1. 8.4.1.5.1 Cutting Leakage Path in Deep Sleep Mode (DIS, SLEEP1, SENSE1)
        6. 8.4.1.6 VCC HOLD Mode
      2. 8.4.2 Light Load Switching Mode
        1. 8.4.2.1 Forced PWM (FPWM) Operation
        2. 8.4.2.2 Diode Emulation (DE) Operation (Connect RSS at SS)
        3. 8.4.2.3 Forced Diode Emulation Operation in FPWM Mode
        4. 8.4.2.4 Skip Mode Operation
      3. 8.4.3 LM5127 Cheat Sheet
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Recommended Power Tree Architecture
        2. 9.2.2.2 Application Ideas
      3. 9.2.3 Application Curves
    3. 9.3 System Examples
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
      2. 12.1.2 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

12.6 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.