SLVSES8A October   2020  – December 2020 LM5127-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Device Enable (EN, VCC_HOLD)
      2. 8.3.2  Dual Input VCC Regulator (BIAS, VCCX, VCC)
      3. 8.3.3  Dual Input VDD Switch (VDD, VDDX)
      4. 8.3.4  Device Configuration and Light Load Switching Mode Selection (CFG/MODE)
      5. 8.3.5  Fixed or Adjustable Output Regulation Target (VOUT, FB)
      6. 8.3.6  Overvoltage Protection (VOUT, FB)
      7. 8.3.7  Power Good Indicator (PGOOD)
      8. 8.3.8  Programmable Switching Frequency (RT)
      9. 8.3.9  External Clock Synchronization (SYNC)
      10. 8.3.10 Programmable Spread Spectrum (DITHER)
      11. 8.3.11 Programmable Soft Start (SS)
      12. 8.3.12 Fast Re-start using VCC_HOLD (VCC_HOLD)
      13. 8.3.13 Transconductance Error Amplifier and PWM (COMP)
      14. 8.3.14 Current Sensing and Slope Compensation (CSA, CSB)
      15. 8.3.15 Constant Peak Current Limit (CSA, CSB)
      16. 8.3.16 Maximum Duty Cycle and Minimum Controllable On-time Limits (Boost)
      17. 8.3.17 Bypass Mode (Boost)
      18. 8.3.18 Minimum Controllable On-time and Minimum Controllable Off-time Limits (Buck)
      19. 8.3.19 Low Dropout Mode for Extended Minimum Input Voltage (Buck)
      20. 8.3.20 Programmable Hiccup Mode Overload Protection (RES)
      21. 8.3.21 MOSFET Drivers and Hiccup Mode Fault Protection (LO, HO, HB)
      22. 8.3.22 Battery Monitor (BMOUT, BMIN_FIX, BMIN_PRG)
      23. 8.3.23 Dual-phase Interleaved Configuration for High Current Supply (CFG)
      24. 8.3.24 Thermal Shutdown Protection
      25. 8.3.25 External VCCX Supply Reduces Power Dissipation
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device Status
        1. 8.4.1.1 Shutdown Mode
        2. 8.4.1.2 Configuration Mode
        3. 8.4.1.3 Active Mode
        4. 8.4.1.4 Sleep Mode
        5. 8.4.1.5 Deep Sleep Mode
          1. 8.4.1.5.1 Cutting Leakage Path in Deep Sleep Mode (DIS, SLEEP1, SENSE1)
        6. 8.4.1.6 VCC HOLD Mode
      2. 8.4.2 Light Load Switching Mode
        1. 8.4.2.1 Forced PWM (FPWM) Operation
        2. 8.4.2.2 Diode Emulation (DE) Operation (Connect RSS at SS)
        3. 8.4.2.3 Forced Diode Emulation Operation in FPWM Mode
        4. 8.4.2.4 Skip Mode Operation
      3. 8.4.3 LM5127 Cheat Sheet
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Recommended Power Tree Architecture
        2. 9.2.2.2 Application Ideas
      3. 9.2.3 Application Curves
    3. 9.3 System Examples
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
      2. 12.1.2 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11.1 Layout Guidelines

These items must be applied to every channel.

  • Populate the device on the top layer.
  • Connect the PGND1, PGND2, and PGND3 pins to the DAP directly on the top layer.
  • Populate a common 10-μF VCC capacitor between VCC and DAP on the bottom layer.
  • Use a differential mode filters (100 Ω and 220 pF) at CSA-CSB. Connect the 100 Ω to CSA.
  • Route CSA and CSB traces in parallel.
  • Populate 0.1-μF HB capacitors between HB and SW on the top layer.
  • Connect the SENSE1 pin to the drain connection of the high-side MOSFET in boost.
  • Connect the SENSE1 pin to the output in SEPIC topology.
  • Connect a 1-μF BIAS capacitor between BIAS and ground.
  • Connect a 0.1-μF VDD capacitor between VDD and AGND.
  • Connect the loop compensation components between COMP to AGND.

These items must be applied to every buck channel.

  • Populate 0.1-μF local VCC capacitors between VCC and PGND on the top layer.
  • Populate local boot diodes (Schottky diode) from the positive connection of the local VCC capacitors to the positive connection of the HB capacitors on the top layer.
  • Populate minimum 1.5-Ω gate resistors from HO to the gate of high-side MOSFET and populate pull-down PNP transistors in parallel.
  • Populate minimum 1.5-Ω gate resistors from LO to the gate of low-side MOSFET and populate pull-down PNP transistors in parallel.
  • Use the low-side MOSFET whose rDS(on) is greater than 8 mΩ at the room temperature.
  • Connect the source connection of the low-side MOSFET to PGND directly with minimum 2.5-mm width trace (length < 0.8 inch).
  • Connect the drain connection of the low-side MOSFET to SW directly with minimum 2.5-mm width trace (length < 0.8 inch).
  • Route SW and PGND in parallel.

These items must be applied when CH2 and CH3 are configured as a dual-phase interleaved buck.

  • Place two RS resistors as close as possible.
  • Place a ceramic output capacitor from the midpoint between two resistors and output ground.