SNVSBT3 September   2020 LM51561H-Q1 , LM5156H-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
    1.     Pin Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Line Undervoltage Lockout (UVLO/SYNC/EN Pin)
      2. 9.3.2  High Voltage VCC Regulator (BIAS, VCC Pin)
      3. 9.3.3  Soft Start (SS Pin)
      4. 9.3.4  Switching Frequency (RT Pin)
      5. 9.3.5  Dual Random Spread Spectrum (DRSS)
      6. 9.3.6  Clock Synchronization (UVLO/SYNC/EN Pin)
      7. 9.3.7  Current Sense and Slope Compensation (CS Pin)
      8. 9.3.8  Current Limit and Minimum On-time (CS Pin)
      9. 9.3.9  Feedback and Error Amplifier (FB, COMP Pin)
      10. 9.3.10 Power-Good Indicator (PGOOD Pin)
      11. 9.3.11 Hiccup Mode Overload Protection (LM51561H-Q1 Only)
      12. 9.3.12 Maximum Duty Cycle Limit and Minimum Input Supply Voltage
      13. 9.3.13 MOSFET Driver (GATE Pin)
      14. 9.3.14 Overvoltage Protection (OVP)
      15. 9.3.15 Thermal Shutdown (TSD)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Standby Mode
      3. 9.4.3 Run Mode
  10. 10Application and Implementation
    1. 10.1 Power-On Hours (POH)
    2. 10.2 Application Information
    3. 10.3 Typical Application
      1. 10.3.1 Design Requirements
      2. 10.3.2 Detailed Design Procedure
        1. 10.3.2.1 Custom Design With WEBENCH® Tools
        2. 10.3.2.2 Recommended Components
        3. 10.3.2.3 Inductor Selection (LM)
        4. 10.3.2.4 Output Capacitor (COUT)
        5. 10.3.2.5 Input Capacitor
        6. 10.3.2.6 MOSFET Selection
        7. 10.3.2.7 Diode Selection
        8. 10.3.2.8 Efficiency Estimation
      3. 10.3.3 Application Curve
    4. 10.4 System Examples
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Examples
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
      2. 13.1.2 Development Support
        1. 13.1.2.1 Custom Design With WEBENCH® Tools
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.1 Power-On Hours (POH)

The device is capable of operating at a wide temperature range including high junction temperature up to 150°C. It is designed to meet or exceed AEC-Q100 grade 1 specifications by accommodating additional IC junction temperature rise while operating at 125°C ambient temperature. The electrical specifications of the device is fully characterized between TJ of -40°C to 150°C to support automotive and other high junction temperature applications. Extended reliability test data beyond AEC-Q100 grade 1 specification is also available upon request.

The device is capable of supporting product lifetime operation temperature profiles typical to many automotive applications. Table 10-1 shows an example of an application with 19340 POH at an input bias voltage of 60 V. The life span of a semiconductor device is a function of bias conditions, operating temperatures, and power-on time. Extended operation at high junction temperature degrades the product total power-on hours.

Table 10-1 POH Breakdown
JUNCTION TEMPERATURE POWER-ON HOURS DISTRIBUTION OPERATING CONDITIONS
-15°C 720 Hours 3.7 %

BIAS = 60V

Ea = 0.7eV
48°C 6300 Hours 32.6 %
101°C 11000 Hours 56.9 %
145°C 1200 Hours 6.2 %
150°C 120 Hours 0.6%