SNVSCE8 July   2024 LM5190-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
    1. 4.1 Wettable Flanks
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings 
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Input Voltage Range (VIN)
      2. 6.3.2  High-Voltage Bias Supply Regulator (VCC, BIAS)
      3. 6.3.3  Precision Enable (EN)
      4. 6.3.4  Power-Good Monitor (PGOOD)
      5. 6.3.5  Switching Frequency (RT)
      6. 6.3.6  Low Dropout Mode
      7. 6.3.7  Dual Random Spread Spectrum (DRSS)
      8. 6.3.8  Soft Start
      9. 6.3.9  Output Voltage Setpoint (FB)
      10. 6.3.10 Minimum Controllable On Time
      11. 6.3.11 Inductor Current Sense (ISNS+, VOUT)
      12. 6.3.12 Voltage Loop Error Amplifier
      13. 6.3.13 Current Monitor, Programmable Current Limit, and Current Loop Error Amplifier (IMON/ILIM, ISET)
      14. 6.3.14 Dual Loop Architecture
      15. 6.3.15 PWM Comparator
      16. 6.3.16 Slope Compensation
      17. 6.3.17 High-Side and Low-Side Gate Drivers (HO, LO)
    4. 6.4 Device Functional Modes
      1. 6.4.1 Sleep Mode
      2. 6.4.2 Forced PWM Mode and Synchronization (FPWM/SYNC)
      3. 6.4.3 Thermal Shutdown
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Power Train Components
        1. 7.1.1.1 Buck Inductor
        2. 7.1.1.2 Output Capacitors
        3. 7.1.1.3 Input Capacitors
        4. 7.1.1.4 Power MOSFETs
        5. 7.1.1.5 EMI Filter
      2. 7.1.2 Error Amplifier and Compensation
    2. 7.2 Typical Applications
      1. 7.2.1 High Efficiency 400kHz CC-CV Regulator
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 Custom Design With Excel Quickstart Tool
          2. 7.2.1.2.2 Recommended Components
        3. 7.2.1.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Power Stage Layout
        2. 7.4.1.2 Gate-Drive Layout
        3. 7.4.1.3 PWM Controller Layout
        4. 7.4.1.4 Thermal Design and Layout
        5. 7.4.1.5 Ground Plane Design
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
        1. 8.2.1.1 PCB Layout Resources
        2. 8.2.1.2 Thermal Design Resources
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.4.2 Layout Example

Figure 7-16 shows a layout example of a synchronous buck regulator with discrete power MOSFETs. The design uses an inner layer as a power-loop return path directly underneath the top layer to create a low-area switching power loop. This loop area, and hence parasitic inductance, must be as small as possible to minimize EMI as well as switch-node voltage overshoot and ringing.

The high-frequency power loop current flows through MOSFETs, through the power ground plane on the inner layer, and back to VIN through the 0603/1210 ceramic capacitors .

Six 0603 case size capacitors are placed in parallel very close to the drain of the high-side MOSFET. The low equivalent series inductance (ESL) and high self-resonant frequency (SRF) of the small footprint capacitors yield excellent high-frequency performance. The negative terminals of these capacitors are connected to the inner layer ground plane with multiple vias, further minimizing parasitic loop inductance.

Additional guidelines to improve noise immunity and reduce EMI are as follows:

  • Connect PGND directly to the low-side MOSFET and power ground. Connect AGND directly to an analog ground plane for sensitive analog components. The analog ground plane for AGND and the power ground plane for PGND must be connected at a single point directly under the device at the exposed pad.
  • Connect the MOSFETs directly to the inductor terminal with short copper connections (without vias) as this net has high dv/dt and contributes to radiated EMI. The single-layer routing of the switch-node connection means that switch-node vias with high dv/dt do not appear on the bottom side of the PCB. This avoids e-field coupling to the reference ground plane during the EMI test. VIN and PGND plane copper pours shield the polygon connecting the MOSFETs to the inductor terminal, further reducing the radiated EMI signature.
  • Place the EMI filter components on the bottom side of the PCB so that the components are shielded from the power stage components on the top side.
LM5190-Q1 PCB Top Layer Figure 7-16 PCB Top Layer