SNVSB12B November   2017  – May 2021 LM73605-Q1 , LM73606-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Characteristics
    7. 7.7 Switching Characteristics
    8. 7.8 System Characteristics
    9. 7.9 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Synchronous Step-Down Regulator
      2. 8.3.2  Auto Mode and FPWM Mode
      3. 8.3.3  Fixed-Frequency Peak Current-Mode Control
      4. 8.3.4  Adjustable Output Voltage
      5. 8.3.5  Enable and UVLO
      6. 8.3.6  Internal LDO, VCC_UVLO, and BIAS Input
      7. 8.3.7  Soft Start and Voltage Tracking
      8. 8.3.8  Adjustable Switching Frequency
      9. 8.3.9  Frequency Synchronization and Mode Setting
      10. 8.3.10 Internal Compensation and CFF
      11. 8.3.11 Bootstrap Capacitor and VBOOT-UVLO
      12. 8.3.12 Power-Good and Overvoltage Protection
      13. 8.3.13 Overcurrent and Short-Circuit Protection
      14. 8.3.14 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Standby Mode
      3. 8.4.3 Active Mode
        1. 8.4.3.1 CCM Mode
        2. 8.4.3.2 DCM Mode
        3. 8.4.3.3 PFM Mode
        4. 8.4.3.4 Fault Protection Mode
  9. 9 Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Layout For EMI Reduction
      2. 9.1.2 Ground Plane
      3. 9.1.3 Optimize Thermal Performance
    2. 9.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Third-Party Products Disclaimer
      2. 10.1.2 Development Support
        1. 10.1.2.1 Custom Design With WEBENCH® Tools
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Receiving Notification of Documentation Updates
    5. 10.5 Support Resources
    6. 10.6 Support Resources
    7. 10.7 Trademarks
    8. 10.8 Electrostatic Discharge Caution
    9. 10.9 Glossary

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.1.1 Layout For EMI Reduction

To optimize EMI performance, place the components in the high di/dt current path, as shown in Figure 9-1, as close as possible to each other. When the components are close to each other, the area of the loop enclosed by these components, and the parasitic inductance of this loop, are minimized. The noises generated by the pulsing current and parasitic inductances are then minimized.

GUID-2DFB3F58-3E01-4CD8-B60A-FFAE86F774E1-low.gifFigure 9-1 Pulsing Current Path of Buck Converter

In a buck converter, the high di/dt current path is composed of the HS and LS MOSFETs and the input capacitors. Because the two MOSFETs are integrated inside the device, they are closer to each other than in discrete solutions. PVIN and PGND pins are the connections from the MOSFETs to the input capacitors. The first step of the layout must be placing the input capacitors, especially the small value ceramic bypass one, as close as possible to PVIN and PGND pins.

The LM73605-Q1/6-Q1 pinout is optimized for low EMI layout. Multiple pins are used for PVIN and PGND to minimized bond wire resistances and inductances. The PVIN and PGND pins are right next to each other to simplify optimal layout. The CBOOT pin is placed next to SW pin for easy and compact CBOOT capacitor layout.