SNOSDE0A February   2022  – May 2022 LM74502-Q1 , LM74502H-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Input Voltage (VS)
      2. 9.3.2 Charge Pump (VCAP)
      3. 9.3.3 Gate Driver (GATE an SRC)
        1. 9.3.3.1 Inrush Current Control
      4. 9.3.4 Enable and Undervoltage Lockout (EN/UVLO)
      5. 9.3.5 Overvoltage Protection (OV)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Conduction Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Design Considerations
        2. 10.2.2.2 MOSFET Selection
        3. 10.2.2.3 Overvoltage Protection
        4. 10.2.2.4 Charge Pump VCAP, Input and Output Capacitance
      3. 10.2.3 Selection of TVS Diodes for 12-V Battery Protection Applications
      4. 10.2.4 Selection of TVS Diodes and MOSFET for 24-V Battery Protection Applications
      5. 10.2.5 Application Curves
    3. 10.3 Surge Stopper Using LM74502-Q1, LM74502H-Q1
      1. 10.3.1 VS Capacitance, Resistor R1 and Zener Clamp (DZ)
      2. 10.3.2 Overvoltage Protection
      3. 10.3.3 MOSFET Selection
    4. 10.4 Fast Turn-On and Turn-Off High Side Switch Driver Using LM74502H-Q1
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Receiving Notification of Documentation Updates
    2. 13.2 Support Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.2.3 Selection of TVS Diodes for 12-V Battery Protection Applications

TVS diodes are used in automotive systems for protection against transients. In the 12-V battery protection application circuit shown in Figure 10-1, a bi-directional TVS diode is used to protect from positive and negative transient voltages that occur during normal operation of the car and these transient voltage levels and pulses are specified in ISO 7637-2 and ISO 16750-2 standards.

The two important specifications of the TVS are breakdown voltage and clamping voltage. Breakdown voltage is the voltage at which the TVS diode goes into avalanche similar to a Zener diode and is specified at a low current value typical 1 mA and the breakdown voltage must be higher than worst case steady state voltages seen in the system. The breakdown voltage of the TVS+ must be higher than 24-V jump start voltage and 35-V suppressed load dump voltage and less than the maximum input voltage rating of LM74502-Q1 (65 V). The breakdown voltage of TVS– must be higher than maximum reverse battery voltage –16 V, so that the TVS– is not damaged due to long time exposure to reverse connected battery.

Clamping voltage is the voltage the TVS diode clamps in high current pulse situations and this voltage is much higher than the breakdown voltage. TVS diodes are meant to clamp transient pulses and must not interfere with steady state operation. In the case of an ISO 7637-2 pulse 1, the input voltage goes up to –150 V with a generator impedance of 10 Ω. This action translates to 15 A flowing through the TVS– and the voltage across the TVS is close to its clamping voltage.

The next criterion is that the absolute minimum rating of source voltage of the LM74502-Q1 (–65 V) and the maximum VDS rating MOSFET are not exceeded. In the design example, 60-V rated MOSFET is chosen.

SMBJ series of TVS' are rated up to 600-W peak pulse power levels. This rating is sufficient for ISO 7637-2 pulses and suppressed load dump (ISO-16750-2 pulse B).