SNOSDG3 December   2024 LM74681

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input and Output Voltage
      2. 7.3.2 Charge Pump
      3. 7.3.3 Gate Driver
      4. 7.3.4 Enable
    4. 7.4 Device Functional Modes
      1. 7.4.1 Conduction Mode
        1. 7.4.1.1 Regulated Conduction Mode
        2. 7.4.1.2 Full Conduction Mode
      2. 7.4.2 Reverse Current Protection Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Design Considerations
        2. 8.2.2.2 MOSFET Selection
        3. 8.2.2.3 Output capacitance
      3. 8.2.3 Application Curves
    3. 8.3 Powered Device for IEEE 802.3bt Class 5-8 (45W-90W) Systems
    4. 8.4 Power Supply Recommendations
      1. 8.4.1 Transient Protection
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4 Pin Configuration and Functions

Figure 4-1 DRR Package, 12-Pin WSON (Top View)
Table 4-1 Pin Functions
PIN I/O(1) DESCRIPTION
NO. NAME
1 IN1 I Bridge rectifier input 1. Connect to top side MOSFET Q1 source and bottom side MOSFET Q4 drain.
2 TG1 O Top side MOSFET gate drive 1.
3 N.C. — No connection.
4 BG1 O Bottom side MOSFET gate drive 1.
5 BG2 O Bottom side MOSFET gate drive 2.
6 GND G Device ground. Connect to bottom side MOSFETs Q3 and Q4 source and output ground.
7 EN I Enable pin. Can be connected to OUTP for always ON operation.
8 OUTP I Bridge rectifier output. Connect to top side MOSFETs Q1 and Q2 drain. Connect a minimum of 0.1µF between OUTP and GND close to the IC.
9 D.N.C. — No connection. Do not connect externally.
10 N.C. — No connection.
11 TG2 O Top side MOSFET gate drive 2.
12 IN2 I Bridge rectifier input 2. Connect to top side MOSFET Q2 source and bottom side MOSFET Q3 drain.
(1) I = Input, O = Output, G = GND