SNOSDD8 December   2022 LM7480

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Charge Pump
      2. 9.3.2 Dual Gate Control (DGATE, HGATE)
        1. 9.3.2.1 Reverse Battery Protection (A, C, DGATE)
        2. 9.3.2.2 Load Disconnect Switch Control (HGATE, OUT)
      3. 9.3.3 Overvoltage Protection and Battery Voltage Sensing (VSNS, SW, OV)
      4. 9.3.4 Low Iq Shutdown and Under Voltage Lockout (EN/UVLO)
    4. 9.4 Device Functional Modes
    5. 9.5 Application Examples
      1. 9.5.1 Redundant Supply OR-ing with Inrush Current Limiting, Overvoltage Protection and ON/OFF Control
      2. 9.5.2 Ideal Diode With Unsuppressed Load Dump Protection
  10. 10Applications and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical 12-V Reverse Battery Protection Application
      1. 10.2.1 Design Requirements for 12-V Battery Protection
      2. 10.2.2 Automotive Reverse Battery Protection
      3. 10.2.3 Detailed Design Procedure
        1. 10.2.3.1 Design Considerations
        2. 10.2.3.2 Charge Pump Capacitance VCAP
        3. 10.2.3.3 Input and Output Capacitance
        4. 10.2.3.4 Hold-Up Capacitance
        5. 10.2.3.5 Overvoltage Protection and Battery Monitor
      4. 10.2.4 MOSFET Selection: Blocking MOSFET Q1
      5. 10.2.5 MOSFET Selection: Hot-Swap MOSFET Q2
      6. 10.2.6 TVS Selection
      7. 10.2.7 Application Curves
    3. 10.3 200-V Unsuppressed Load Dump Protection Application
      1. 10.3.1 Design Requirements for 200-V Unsuppressed Load Dump Protection
      2. 10.3.2 Design Procedure
        1. 10.3.2.1 Boost Converter Components (C2, C3, L1)
        2. 10.3.2.2 Input and Output Capacitance
        3. 10.3.2.3 VS Capacitance, Resistor, and Zener Clamp
        4. 10.3.2.4 Overvoltage Protection and Output Clamp
        5. 10.3.2.5 MOSFET Q1 Selection
        6. 10.3.2.6 Input TVS Selection
        7. 10.3.2.7 MOSFET Q2 Selection
      3. 10.3.3 Application Curves
    4. 10.4 Do's and Don'ts
    5. 10.5 Power Supply Recommendations
      1. 10.5.1 Transient Protection
      2. 10.5.2 TVS Selection for 12-V Battery Systems
      3. 10.5.3 TVS Selection for 24-V Battery Systems
    6. 10.6 Layout
      1. 10.6.1 Layout Guidelines
      2. 10.6.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.2.5 MOSFET Selection: Hot-Swap MOSFET Q2

The VDS rating of the MOSFET Q2 should be sufficient to handle the maximum system voltage along with the input transient voltage. For this 12-V design, transient overvoltage events are during suppressed load dump 35 V 400 ms and ISO 7637-2 pulse 2 A 50 V for 50 µs. Further, ISO 7637-2 Pulse 3B is a very fast repetitive pulse of 100 V 100 ns that is usually absorbed by the input and output ceramic capacitors and the maximum voltage on the 12-V battery can be limited to < 40 V the minimum recommended input capacitance of 0.1 µF. The 50-V SO 7637-2 Pulse 2 A can also be absorbed by input and output capacitors and its amplitude could be reduced to 40-V peak by placing sufficient amount of capacitance at input and output. However for this 12-V design, maximum system voltage is 50 V and a 60-V VDS rated MOSFET is selected.

The VGS rating of the MOSFET Q2 should be higher than that maximum HGATE-OUT voltage 15 V.

Inrush current through the MOSFET during input hot-plug into the 12-V battery is determined by output capacitance. External capacitor on HGATE, CDVDT is used to limit the inrush current during input hot-plug or startup. The value of inrush current determined by Equation 2 need to be selected to ensure that the MOSFET Q2 is operating well within its safe operating area (SOA). To limit inrush current to 250 mA, value of CDVDT is 10.43 nF, closest standard value of 10.0 nF is chosen.

Duration of inrush current is calculated by

Equation 7. GUID-CAD475DF-23C6-4696-AC05-24F7B474E2B3-low.png

Calculated inrush current duration is 2.36 ms with 250-mA inrush current.

MOSFET BUK7Y4R8-60E having 60-V VDS and ±20-V VGS rating is selected for Q2. Power dissipation during inrush is well within the MOSFET's safe operating area (SOA).