SNOSDD8 December   2022 LM7480

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Charge Pump
      2. 9.3.2 Dual Gate Control (DGATE, HGATE)
        1. 9.3.2.1 Reverse Battery Protection (A, C, DGATE)
        2. 9.3.2.2 Load Disconnect Switch Control (HGATE, OUT)
      3. 9.3.3 Overvoltage Protection and Battery Voltage Sensing (VSNS, SW, OV)
      4. 9.3.4 Low Iq Shutdown and Under Voltage Lockout (EN/UVLO)
    4. 9.4 Device Functional Modes
    5. 9.5 Application Examples
      1. 9.5.1 Redundant Supply OR-ing with Inrush Current Limiting, Overvoltage Protection and ON/OFF Control
      2. 9.5.2 Ideal Diode With Unsuppressed Load Dump Protection
  10. 10Applications and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical 12-V Reverse Battery Protection Application
      1. 10.2.1 Design Requirements for 12-V Battery Protection
      2. 10.2.2 Automotive Reverse Battery Protection
      3. 10.2.3 Detailed Design Procedure
        1. 10.2.3.1 Design Considerations
        2. 10.2.3.2 Charge Pump Capacitance VCAP
        3. 10.2.3.3 Input and Output Capacitance
        4. 10.2.3.4 Hold-Up Capacitance
        5. 10.2.3.5 Overvoltage Protection and Battery Monitor
      4. 10.2.4 MOSFET Selection: Blocking MOSFET Q1
      5. 10.2.5 MOSFET Selection: Hot-Swap MOSFET Q2
      6. 10.2.6 TVS Selection
      7. 10.2.7 Application Curves
    3. 10.3 200-V Unsuppressed Load Dump Protection Application
      1. 10.3.1 Design Requirements for 200-V Unsuppressed Load Dump Protection
      2. 10.3.2 Design Procedure
        1. 10.3.2.1 Boost Converter Components (C2, C3, L1)
        2. 10.3.2.2 Input and Output Capacitance
        3. 10.3.2.3 VS Capacitance, Resistor, and Zener Clamp
        4. 10.3.2.4 Overvoltage Protection and Output Clamp
        5. 10.3.2.5 MOSFET Q1 Selection
        6. 10.3.2.6 Input TVS Selection
        7. 10.3.2.7 MOSFET Q2 Selection
      3. 10.3.3 Application Curves
    4. 10.4 Do's and Don'ts
    5. 10.5 Power Supply Recommendations
      1. 10.5.1 Transient Protection
      2. 10.5.2 TVS Selection for 12-V Battery Systems
      3. 10.5.3 TVS Selection for 24-V Battery Systems
    6. 10.6 Layout
      1. 10.6.1 Layout Guidelines
      2. 10.6.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Input Pins A to GND –65 70 V
VS to GND –1 70
VSNS, SW, EN/UVLO, C, OV, OUT to GND, V(A) > 0 V –0.3 70
VSNS, SW, EN/UVLO, C, OV, OUT to GND, V(A) ≤ 0 V V(A) (70 + V(A))
RTN to GND –65 0.3
IVSNS, ISW  –1 10 mA
IEN/UVLO, IOV,  V(A) > 0 V –1 mA
IEN/UVLO, IOV,   V(A) ≤ 0 V Internally limited
Output Pins OUT to VS –65 16.5 V
Output Pins CAP to VS –0.3 15 V
CAP to A –0.3 85
DGATE to A –0.3 15
HGATE to OUT –0.3 15
Output to Input Pins C to A –5 85
Operating junction temperature, Tj(2) –55 150 °C
Storage temperature, Tstg –55 150
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.