SNVSAU3B December   2017  – October 2019 LM76002-Q1 , LM76003-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Simplified Schematic
    2.     Efficiency vs Output Current (VOUT = 5 V, fSW = 400 kHz, Auto Mode)
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 System Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Fixed-Frequency, Peak-Current-Mode Control
      2. 7.3.2  Light Load Operation Modes — PFM and FPWM
      3. 7.3.3  Adjustable Output Voltage
      4. 7.3.4  Enable (EN Pin) and UVLO
      5. 7.3.5  Internal LDO, VCC UVLO, and Bias Input
      6. 7.3.6  Soft Start and Voltage Tracking (SS/TRK)
      7. 7.3.7  Adjustable Switching Frequency (RT) and Frequency Synchronization
      8. 7.3.8  Minimum On-Time, Minimum Off-Time, and Frequency Foldback at Dropout Conditions
      9. 7.3.9  Internal Compensation and CFF
      10. 7.3.10 Bootstrap Voltage and VBOOT UVLO (BOOT Pin)
      11. 7.3.11 Power Good and Overvoltage Protection (PGOOD)
      12. 7.3.12 Overcurrent and Short-Circuit Protection
      13. 7.3.13 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode
      2. 7.4.2 Standby Mode
      3. 7.4.3 Active Mode
      4. 7.4.4 CCM Mode
      5. 7.4.5 DCM Mode
      6. 7.4.6 Light Load Mode
      7. 7.4.7 Foldback Mode
      8. 7.4.8 Forced Pulse-Width-Modulation Mode
      9. 7.4.9 Self-Bias Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Custom Design With WEBENCH® Tools
        2. 8.2.2.2  Output Voltage Setpoint
        3. 8.2.2.3  Switching Frequency
        4. 8.2.2.4  Input Capacitors
        5. 8.2.2.5  Inductor Selection
        6. 8.2.2.6  Output Capacitor Selection
        7. 8.2.2.7  Feed-Forward Capacitor
        8. 8.2.2.8  Bootstrap Capacitors
        9. 8.2.2.9  VCC Capacitors
        10. 8.2.2.10 BIAS Capacitors
        11. 8.2.2.11 Soft-Start Capacitors
        12. 8.2.2.12 Undervoltage Lockout Setpoint
        13. 8.2.2.13 PGOOD
        14. 8.2.2.14 Synchronization
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Layout Highlights
      2. 10.1.2 Compact Layout for EMI Reduction
      3. 10.1.3 Ground Plane and Thermal Considerations
      4. 10.1.4 Feedback Resistors
    2. 10.2 Layout Example
    3. 10.3 Thermal Design
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Custom Design With WEBENCH® Tools
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.1.2 Compact Layout for EMI Reduction

Radiated EMI is generated by the high di/dt components in pulsing currents in switching converters. The larger area covered by the path of a pulsing current, the more electromagnetic emission is generated. The key to minimize radiated EMI is to identify the pulsing current path and minimize the area of the path. In Buck converters, the pulsing current path is from the VIN side of the input capacitors to HS switch, to the LS switch, and then return to the ground of the input capacitors, as shown in Figure 89.

LM76002-Q1 LM76003-Q1 buck-didt_snvsak0.gifFigure 89. Buck Converter High di / dt Path

High frequency ceramic bypass capacitors at the input side provide primary path for the high di/dt components of the pulsing current. Placing ceramic bypass capacitor(s) as close as possible to the PVIN and PGND pins is the key to EMI reduction. The SW pin connecting to the inductor should be as short as possible, and just wide enough to carry the load current without excessive heating. Short, thick traces or copper pours (shapes) should be used for high current condution path to minimize parasitic resistance. The output capacitors should be place close to the VOUT end of the inductor and closely grounded to PGND pin and exposed PAD. Place the bypass capacitors on VCC and BIAS pins as close as possible to the pins respectively and closely grounded to PGND and the exposed PAD.