SNOSDF9B July   2023  – March 2024 LMG2100R044

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 ESD Ratings
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay and Mismatch Measurement
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Control Inputs
      2. 7.3.2 Start-up and UVLO
      3. 7.3.3 Bootstrap Supply Voltage Clamping
      4. 7.3.4 Level Shift
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VCC Bypass Capacitor
        2. 8.2.2.2 Bootstrap Capacitor
        3. 8.2.2.3 Slew Rate Control
        4. 8.2.2.4 Power Dissipation
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RAR|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3 Power Supply Recommendations

The recommended bias supply voltage range for LMG2100R044 is from 4.75 V to 5.25 V. Note that the gate voltage of the low-side GaN FET is not clamped internally. Hence, it is important to keep the VCC bias supply within the recommended operating range to prevent exceeding the low-side GaN transistor gate breakdown voltage.

The UVLO protection feature also involves a hysteresis function. This means that once the device is operating in normal mode, if the VCC voltage drops, the device continues to operate in normal mode as far as the voltage drop does not exceeds the hysteresis specification, VCC(hyst). If the voltage drop is more than hysteresis specification, the device shuts down. Therefore, while operating at or near the 4.5 V range, the voltage ripple on the auxiliary power supply output must be smaller than the hysteresis specification of LMG2100R044 to avoid triggering device-shutdown.

Place a local bypass capacitor between the VCC and AGND pins. This capacitor must be located as close as possible to the device. A low ESR, ceramic surface-mount capacitor is recommended. TI recommends using 2 capacitors across VCC and AGND: a 100 nF ceramic surface-mount capacitor for high frequency filtering placed very close to VCC and AGND pin, and another surface-mount capacitor, 220 nF to 10 μF, for IC bias requirements.