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LMG2100R044

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100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection

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Data sheet

LMG2100R044

ACTIVE
Data sheet Order now

Product details

VDS (max) (V) 100 RDS(on) (mΩ) 4.4 ID (max) (A) 35 Features Built-in bootstrap diode, Half-bridge, Top-side cooled Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 100 RDS(on) (mΩ) 4.4 ID (max) (A) 35 Features Built-in bootstrap diode, Half-bridge, Top-side cooled Rating Catalog Operating temperature range (°C) -40 to 125
WQFN-FCRLF (RAR) 16 See data sheet
  • Integrated 4.4mΩ half-bridge GaN FETs and driver
  • 90V continuous, 100V pulsed voltage rating
  • Package optimized for easy PCB layout
  • High slew rate switching with low ringing
  • 5V external bias power supply
  • Supports 3.3V and 5V input logic levels
  • Gate driver capable of up to 10MHz switching
  • Excellent propagation delay (33ns typical) and matching (2ns typical)
  • Internal bootstrap supply voltage clamping to prevent GaN FET Overdrive
  • Supply rail undervoltage for lockout protection
  • Low power consumption
  • Exposed top QFN package for top-side cooling
  • Large GND pad for bottom-side cooling
  • Integrated 4.4mΩ half-bridge GaN FETs and driver
  • 90V continuous, 100V pulsed voltage rating
  • Package optimized for easy PCB layout
  • High slew rate switching with low ringing
  • 5V external bias power supply
  • Supports 3.3V and 5V input logic levels
  • Gate driver capable of up to 10MHz switching
  • Excellent propagation delay (33ns typical) and matching (2ns typical)
  • Internal bootstrap supply voltage clamping to prevent GaN FET Overdrive
  • Supply rail undervoltage for lockout protection
  • Low power consumption
  • Exposed top QFN package for top-side cooling
  • Large GND pad for bottom-side cooling

The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R044 device is available in a 5.5mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R044 device is available in a 5.5mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet LMG2100R044 100V, 35A GaN Half-Bridge Power Stage datasheet (Rev. B) PDF | HTML Mar 15, 2024
Technical article Overview of a planar transformer used in a 1-kW high-density LLC power module PDF | HTML Aug 6, 2025
Application brief Application of GaN FET in Humanoid Robots PDF | HTML Jan 3, 2025
Technical article Four mid-voltage applications where GaN will transform electronic designs PDF | HTML Feb 17, 2024

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG2100EVM-078 — LMG2100 evaluation module

The LMG2100 evaluation module (EVM) is a compact easy-to-use power stage that can be configured as a buck converter, boost converter or other converter topology using a half bridge. The EVM features a LMG2100 half-bridge power module with two 100V 4.4-mΩ GaN FETs.
User guide: PDF | HTML
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Simulation model

LMG2100 SIMPLIS Model

SNOM797.ZIP (87 KB) - SIMPLIS model
Supported products & hardware
Calculation tool

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
Supported products & hardware
Reference design

PMP23340C2K — 48V to 12V GaN-enabled 1.1kW 1/8 brick power module reference design using C2000™ MCU

This reference design shows how a high performance GaN can enable high efficiency and small form factor for intermediate bus converters.
Supported products & hardware
Reference design

PMP23340UCD — 48V to 12V GaN-enabled 1.1kW 1/8 brick reference design using digital power isolated controller

This reference design shows how a high performance GaN can enable high efficiency and small form factor for intermediate bus converters using UCD3138ARJAT digital power isolated controller.
Supported products & hardware
Reference design

PMP23611 — 48VIN, 250W automotive two-phase buck converter with GaN half-bridge power stage reference design

This reference design offers power for automotive advanced driver assistance systems (ADAS), infotainment, and cluster applications. Operation is over the full automotive range up to 60V. The design exhibits a peak conversion efficiency of 92% to 96% in the 20VIN to 60VIN range with high power (...)
Supported products & hardware
Reference design

PMP31349 — 30V to 60V input, 240W buck converter reference design with GaN switches

This reference design is a power supply generating a regulated 12V output from a nominal 48V battery input (ranging from 30V to 60V). The circuit is designed for 20A continuous output current. The LM5148-Q1 buck controller provides switching signals to a LMG2100R044 half-bridge GaN power stage (...)
Supported products & hardware
Reference design

PMP41068 — 100W Class-D audio amplifies reference design with GaN

This reference design demonstrates a Single-end Class D power stage using GaN HEMT. The design uses LMG2100R044 as power switches, the working frequency is 1MHz. 

Supported products & hardware
Reference design

TIDA-010042 — 400-W GaN-based MPPT charge controller and power optimizer reference design

This reference design is a Maximum Power Point Tracking (MPPT) solar charge controller for 12V and 24V batteries that can be used as a power optimizer in the future. This compact reference design targets small- and medium-power solar charger designs and is capable of operating with 15V to 60V (...)
Supported products & hardware
Reference design

TIDA-010933 — 1.6kW, bidirectional micro inverter based on GaN reference design

This reference design shows a four-input bidirectional 1.6kW GaN-based microinverter with energy storage capability.
Supported products & hardware
Reference design

TIDA-010936 — 48V/16A small form factor three-phase GaN inverter reference design for integrated motor drives

This reference design demonstrates a high-power density 12V to 60V three-phase power stage using three LMG2100R044 100V, 35A gallium nitride (GaN) half-bridges with integrated GaN FETs, driver and bootstrap diode specifically for motor-integrated servo drives and robotics applications. Accurate (...)
Supported products & hardware
Package Pins CAD symbols, footprints & 3D models
WQFN-FCRLF (RAR) 16 Ultra Librarian
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