This reference design demonstrates a high-power density 12V to 60V three-phase power stage using three LMG2100R044 100V, 35A gallium nitride (GaN) half-bridges with integrated GaN FETs, driver and bootstrap diode specifically for motor-integrated servo drives and robotics applications. Accurate phase-current sensing is achieved through either the IN241A current sense amplifier, or the AMC0106M05 functionally isolated delta-sigma modulator, DC-link and phase voltages are also measured allowing validation of advanced sensorless designs, such as the InstaSPINFOC™. The design offers a TI BoosterPack™ compatible 3.3V I/O interface to connect to a C2000™ MCU LaunchPad™ development kit or a Sitara™ microcontroller for quick and easy performance evaluation of TI's GaN technology.
Features
- Small form factor LMG2100R044 GaN half-bridge power stage enables high power density and easy PCB layout
- High efficiency (99.3% peak) at 40kHz PWM enables operation at 25°C ambient up to 16ARMS continuous current without heat sink
- LMG2100R044 device enables operation at higher PWM frequencies to help reduce DC-bus capacitor size and height by replacing electrolytic with ceramic capacitors
- Zero reverse recovery losses reduce switch node oscillations
- Low dead time of 16.6ns minimizes phase voltage distortions
- Precision phase current sense options using a 1mΩ shunt with either a INA241A amplifier with high PWM rejection or an AMC0106M05 functional isolated modulator