SNOSDE2A October   2022  – December 2022 LMG2610

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 GaN Power FET Switching Parameters
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  GaN Power FET Switching Capability
      2. 8.3.2  Turn-On Slew-Rate Control
      3. 8.3.3  Current-Sense Emulation
      4. 8.3.4  Bootstrap Diode Function
      5. 8.3.5  Input Control Pins (EN, INL, INH)
      6. 8.3.6  INL - INH Interlock
      7. 8.3.7  AUX Supply Pin
        1. 8.3.7.1 AUX Power-On Reset
        2. 8.3.7.2 AUX Under-Voltage Lockout (UVLO)
      8. 8.3.8  BST Supply Pin
        1. 8.3.8.1 BST Power-On Reset
        2. 8.3.8.2 BST Under-Voltage Lockout (UVLO)
      9. 8.3.9  Over-Current Protection
      10. 8.3.10 Over-Temperature Protection
      11. 8.3.11 Fault Reporting
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Turn-On Slew-Rate Design
        2. 9.2.2.2 Current-Sense Design
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 Solder-Joint Stress Relief
        2. 9.4.1.2 Signal-Ground Connection
        3. 9.4.1.3 CS Pin Signal
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
  • RRG|40
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

The LMG2610 is a 650-V GaN power-FET half bridge intended for < 75-W active-clamp flyback (ACF) converters in switch mode power supply applications. The LMG2610 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9-mm by 7-mm QFN package.

The asymmetric GaN FET resistances are optimized for ACF operating conditions. Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The high-side gate-drive signal level shifter eliminates noise and burst-mode power dissipation problems found with external solutions. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2610 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down.

Device Information
PART NUMBER PACKAGE(1) BODY SIZE (NOM)
LMG2610 QFN 9.00 mm x 7.00 mm

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