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Data Sheet
LMG2640
Integrated 650V GaN Half Bridge
1 Features
- 650V GaN power-FET half bridge
- 105mΩ low-side and high-side GaN FETs
- Integrated gate drivers with low
propagation delays
- Current-sense emulation with
high-bandwidth and high accuracy
- Low-side / high-side gate-drive
interlock
- High-side gate-drive signal level
shifter
- Smart-switched bootstrap diode
function
- High-side start up : < 8µs
- Low-side / high-side
cycle-by-cycle over-current protection
- Over-temperature protection with
FLT pin reporting
- AUX idle quiescent current:
250μA
- AUX standby quiescent current: 50μA
- BST idle quiescent current: 65μA
- Maximum supply and input logic pin
voltage: 26V
- 9×7mm QFN package with dual thermal
pads