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LMG2640

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650V 105mΩ GaN half-bridge with integrated driver, protection and current sense

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Data sheet

LMG2640

ACTIVE
Data sheet Order now

Product details

VDS (max) (V) 650 RDS(on) (mΩ) 105 ID (max) (A) 8.5 Features Bottom-side cooled, Built-in bootstrap diode, Cycle-by-cycle overcurrent protection, Half-bridge, Overtemperature protection, USB C/PD compatible Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 650 RDS(on) (mΩ) 105 ID (max) (A) 8.5 Features Bottom-side cooled, Built-in bootstrap diode, Cycle-by-cycle overcurrent protection, Half-bridge, Overtemperature protection, USB C/PD compatible Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (RRG) 40 63 mm² 9 x 7
  • 650V GaN power-FET half bridge
  • 105mΩ low-side and high-side GaN FETs
  • Integrated gate drivers with low propagation delays
  • Current-sense emulation with high-bandwidth and high accuracy
  • Low-side / high-side gate-drive interlock
  • High-side gate-drive signal level shifter
  • Smart-switched bootstrap diode function
  • High-side start up : < 8µs
  • Low-side / high-side cycle-by-cycle over-current protection
  • Over-temperature protection with FLT pin reporting
  • AUX idle quiescent current: 250µA
  • AUX standby quiescent current: 50µA
  • BST idle quiescent current: 65µA
  • Maximum supply and input logic pin voltage: 26V
  • 9×7mm QFN package with dual thermal pads
  • 650V GaN power-FET half bridge
  • 105mΩ low-side and high-side GaN FETs
  • Integrated gate drivers with low propagation delays
  • Current-sense emulation with high-bandwidth and high accuracy
  • Low-side / high-side gate-drive interlock
  • High-side gate-drive signal level shifter
  • Smart-switched bootstrap diode function
  • High-side start up : < 8µs
  • Low-side / high-side cycle-by-cycle over-current protection
  • Over-temperature protection with FLT pin reporting
  • AUX idle quiescent current: 250µA
  • AUX standby quiescent current: 50µA
  • BST idle quiescent current: 65µA
  • Maximum supply and input logic pin voltage: 26V
  • 9×7mm QFN package with dual thermal pads

The LMG2640 is a 650V GaN power-FET half bridge intended for switch mode power supply applications. The LMG2640 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9mm by 7mm QFN package.

The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The high-side gate-drive signal level shifter eliminates noise and burst-mode power dissipation problems found with external solutions. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2640 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down.

The LMG2640 is a 650V GaN power-FET half bridge intended for switch mode power supply applications. The LMG2640 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9mm by 7mm QFN package.

The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The high-side gate-drive signal level shifter eliminates noise and burst-mode power dissipation problems found with external solutions. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2640 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down.
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* Data sheet LMG2640 Integrated 650V GaN Half Bridge datasheet PDF | HTML 27 Nov 2024
EVM User's guide LMG2640 Half-Bridge Daughter Card Evaluation Module User's Guide PDF | HTML 07 Oct 2024

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Daughter card

LMG2640EVM-090 — LMG2640 daughter card

The LMG2640 daughter card evaluation module (EVM) is designed to provide a quick and easy platform to evaluate TI's integrated GaN devices in any half-bridge topology. The board is designed to be interfaced with a larger system using the six power pins and 10 digital pins on the bottom edge of the (...)

User guide: PDF | HTML
Not available on TI.com
Calculation tool

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
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