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Gallium nitride (GaN) power stages

LMG3411R150

ACTIVE

600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection

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Data sheet

LMG3411R150

ACTIVE
Data sheet Order now

Product details

VDS (max) (V) 600 RDS(on) (mΩ) 150 ID (max) (A) 6 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Overtemperature protection Rating Catalog Operating temperature range (°C) -40 to 150
VDS (max) (V) 600 RDS(on) (mΩ) 150 ID (max) (A) 6 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Overtemperature protection Rating Catalog Operating temperature range (°C) -40 to 150
VQFN (RWH) 32 64 mm² 8 x 8
  • TI GaN process qualified through accelerated reliability in-application hard-switching profiles
  • Enables high-density power conversion designs
    • Superior system performance over cascode or stand-alone GaN FETs
    • Low inductance 8 mm × 8 mm QFN package for ease of design and layout
    • Adjustable drive strength for switching performance and EMI control
    • Digital fault status output signal
    • Only +12 V of unregulated supply needed
  • Integrated gate driver
    • Zero common source inductance
    • 20-ns propagation delay for high-frequency design
    • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
    • 25-V/ns to 100-V/ns adjustable slew rate
  • Robust protection
    • Requires no external protection components
    • Overcurrent protection with <100 ns response
    • Greater than 150-V/ns slew rate immunity
    • Transient overvoltage immunity
    • Overtemperature protection
    • Undervoltage lockout (UVLO) protection on all supply rails
  • Device Options:
    • LMG3410R150: Latched overcurrent protection
    • LMG3411R150: Cycle-by-cycle overcurrent proection
  • TI GaN process qualified through accelerated reliability in-application hard-switching profiles
  • Enables high-density power conversion designs
    • Superior system performance over cascode or stand-alone GaN FETs
    • Low inductance 8 mm × 8 mm QFN package for ease of design and layout
    • Adjustable drive strength for switching performance and EMI control
    • Digital fault status output signal
    • Only +12 V of unregulated supply needed
  • Integrated gate driver
    • Zero common source inductance
    • 20-ns propagation delay for high-frequency design
    • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
    • 25-V/ns to 100-V/ns adjustable slew rate
  • Robust protection
    • Requires no external protection components
    • Overcurrent protection with <100 ns response
    • Greater than 150-V/ns slew rate immunity
    • Transient overvoltage immunity
    • Overtemperature protection
    • Undervoltage lockout (UVLO) protection on all supply rails
  • Device Options:
    • LMG3410R150: Latched overcurrent protection
    • LMG3411R150: Cycle-by-cycle overcurrent proection

The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
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Technical documentation

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Type Title Date
* Data sheet LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection datasheet (Rev. B) PDF | HTML 13 Feb 2020
White paper Achieving GaN Products With Lifetime Reliability PDF | HTML 02 Jun 2021
White paper TI GaN FET와 C2000™ 실시간 MCU를 결합하여 전력 밀도가 높고 효율적인 전원 시스템 달성 18 Mar 2021
White paper 結合 TI GaN FETs 與 C2000™ 即時 MCU，實現功率密集與有效率的數位電源系統 18 Mar 2021
White paper Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs 05 Jan 2021
More literature A Generalized Approach to Determine the Switching Lifetime of a GaN FET 20 Oct 2020
Analog Design Journal Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC 22 Sep 2020
Application note Thermal Considerations for Designing a GaN Power Stage (Rev. B) 04 Aug 2020
More literature GaN FET Reliability to Power-line Surges Under Use-conditions 25 Mar 2019
Application note Third quadrant operation of GaN 25 Feb 2019
Technical article Searching for the newest innovations in power? Find them at APEC PDF | HTML 09 Feb 2019
EVM User's guide LMG3411R150-031 EVM user guide 17 Jan 2019

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG34XX-BB-EVM — LMG34xx GaN system-level evaluation motherboard for LMG341x Family

The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG341x half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)

User guide: PDF
Not available on TI.com
Daughter card

LMG3411EVM-031 — LMG3411R150 600-V 150-mΩ GaN with cycle-by-cycle overcurrent protection half-bridge daughter card

LMG3411EVM-031 configures two LMG3411R150 GaN FETs in a half bridge with the cycle by cycle over current protection function and all the necessary auxiliary peripheral circuitry.  This EVM is designed to work in conjunction with larger systems.
User guide: PDF
Not available on TI.com
Calculation tool

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG2100R026 — 100V 2.6mΩ half-bridge gallium nitride (GaN) power stage LMG2100R044 — 100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection LMG2610 — 650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense LMG2640 — 650V 105mΩ GaN half-bridge with integrated driver, protection and current sense LMG2650 — 650V 95mΩ GaN half-bridge with integrated driver, protection and current sense LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 — 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3425R030 — 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3425R050 — 600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3426R030 — 600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3426R050 — 600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3427R030 — 600V 30mΩ GaN FET with integrated driver, protection and zero-current detection LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R050 — 650-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3526R050 — 650-V 50-mΩ GaN FET with integrated driver, protection and zero-voltage detection reporting LMG5200 — 80V GaN Half Bridge Power Stage
Download
Calculation tool

SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet

Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection
Download
Calculation tool

SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet

Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 — 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection
Download
Reference designs

TIDA-00915 — Three-phase, 1.25-kW, 200-VAC small form factor GaN inverter reference design for integrated drives

This reference design is a three-phase inverter with a continuous power rating of 1.25 kW at 50°C ambient and 550 W at 85°C ambient for driving 200-V AC servo motors. It features 600-V LMG3411R150 Gallium Nitride (GaN) power modules with an integrated FET and gate driver mounted on an (...)
Design guide: PDF
Schematic: PDF
Reference designs

PMP22538 — 60-W GaN PFC flyback reference design

This reference design uses UCC28811 power factor correction (PFC) flyback controller to create an isolated 60-V output capable of 1-A loading while keeping input harmonic distortion low. The high efficiency of using LMG3411R150 GaN primary switch allows for compact size and low-temperature rise (...)
Test report: PDF
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VQFN (RWH) 32 Ultra Librarian
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