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LMG3522R030-Q1

ACTIVE

Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

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Data sheet

LMG3522R030-Q1

ACTIVE
Data sheet Order now

Product details

VDS (max) (V) 650 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting, Top-side cooled Rating Automotive Operating temperature range (°C) -40 to 150
VDS (max) (V) 650 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting, Top-side cooled Rating Automotive Operating temperature range (°C) -40 to 150
VQFN (RQS) 52 144 mm² 12 x 12
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C to +125°C, TA
    • Junction temperature: –40°C to +150°C, TJ
  • 650V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
  • Top-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C to +125°C, TA
    • Junction temperature: –40°C to +150°C, TJ
  • 650V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
  • Top-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance

The LMG3522R030-Q1 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG3522R030-Q1 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.

The LMG3522R030-Q1 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG3522R030-Q1 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.

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Technical documentation

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Type Title Date
* Data sheet LMG3522R030-Q1 650 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. D) PDF | HTML 02 Feb 2024
Technical article Managing thermals: 3 ways to break through power-density barriers PDF | HTML 16 Oct 2022
Technical article Is GaN reliable, or is that the right question? PDF | HTML 21 Apr 2022
Technical article Increasing power density with an integrated GaN solution PDF | HTML 14 Mar 2022
More literature AEC-Q100 GaN: Future for on-board charging and high-voltage DC/DC 15 Dec 2021
More literature Optimizing GaN-Based High-Voltage, High-Power Designs PDF | HTML 07 Dec 2021
More literature Optimizing GaN-based high-voltage, high-power designs PPT 02 Dec 2021
White paper Achieving GaN Products With Lifetime Reliability PDF | HTML 02 Jun 2021
White paper TI GaN FET와 C2000™ 실시간 MCU를 결합하여 전력 밀도가 높고 효율적인 전원 시스템 달성 18 Mar 2021
White paper 結合 TI GaN FETs 與 C2000™ 即時 MCU，實現功率密集與有效率的數位電源系統 18 Mar 2021
Application note Thermal Design and Performance of Top-Side Cooled QFN 12x12 Package 05 Mar 2021
EVM User's guide LMG352XEVM-04X EVM User's Guide (Rev. A) 03 Feb 2021
White paper Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs 05 Jan 2021
Technical article Automotive GaN FETs engineered for high frequency and robustness in HEV/EVs PDF | HTML 30 Nov 2020
Analog Design Journal Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC 22 Sep 2020

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG342X-BB-EVM — LMG342x evaluation module

The LMG342X-BB-EVM is an easy-to-use breakout board to configure any LMG342xR0x0 half-bridge boards, such as the LMG3422EVM-043, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry, this evaluation module (EVM) allows for quick measurements of the gallium (...)

User guide: PDF | HTML
Not available on TI.com
Daughter card

LMG3522EVM-042 — LMG3522R030-Q1 automotive 650-V 30-mΩ GaN FET with integrated driver daughter card

LMG3522EVM-042 configures two LMG3522R030 GaN FETs in a half bridge with the cycle-by-cycle over current protection, latched short circuit protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.

User guide: PDF
Not available on TI.com
Simulation model

LMG3422R0x0 LMG3425R0x0 LMG3522R030 and LMG3522R030-Q1 PLECS Simulation Model

SNOM768.ZIP (340 KB) - PLECS model
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Simulation model

LMG3522R030 PSpice Model

SNOM770.ZIP (644 KB) - PSpice Model
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Calculation tool

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG2100R026 — 100V 2.6mΩ half-bridge gallium nitride (GaN) power stage LMG2100R044 — 100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection LMG2610 — 650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense LMG2640 — 650V 105mΩ GaN half-bridge with integrated driver, protection and current sense LMG2650 — 650V 95mΩ GaN half-bridge with integrated driver, protection and current sense LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 — 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3425R030 — 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3425R050 — 600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3426R030 — 600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3426R050 — 600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3427R030 — 600V 30mΩ GaN FET with integrated driver, protection and zero-current detection LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R050 — 650-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3526R050 — 650-V 50-mΩ GaN FET with integrated driver, protection and zero-voltage detection reporting LMG5200 — 80V GaN Half Bridge Power Stage
Download
Calculation tool

SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet

Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection
Download
Calculation tool

SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet

Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 — 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection
Download
Reference designs

PMP22650 — GaN-based, 6.6-kW, bidirectional, onboard charger reference design

The PMP22650 reference design is a 6.6-kW, bidirectional, onboard charger. The design employs a two-phase totem pole PFC and a full-bridge CLLLC converter with synchronous rectification. The CLLLC utilizes both frequency and phase modulation to regulate the output across the required regulation (...)
Test report: PDF
Schematic: PDF
Reference designs

TIDM-02013 — 7.4-kW on-board charger reference design with CCM totem pole PFC and CLLLC DC/DC using C2000™ MCU

TIDM-02013 is a bidirectional onboard charger reference design. The design consists of an interleaved continuous conduction mode (CCM) totem-pole (TTPL) bridgeless power-factor correction (PFC) power stage followed by a CLLLC DCDC power stage all controlled using a single C2000™ real-time (...)
Design guide: PDF
Reference designs

TIDA-010236 — 4-kW GaN totem-pole PFC reference design for appliances

This reference design is a 4-kW continuous conduction mode (CCM) totem-pole power factor correction (PFC) with a top-cooled gallium nitride (GaN) daughterboard and TMS320F280025C digital controller. Along with the integrated protection features of LMG352x and C2000, full protections are (...)
Design guide: PDF
Package Pins CAD symbols, footprints & 3D models
VQFN (RQS) 52 Ultra Librarian
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