LMG5200
- Integrated 15-mΩ GaN FETs and Driver
- 80-V Continuous, 100-V Pulsed Voltage Rating
- Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
- Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies
- Ideal for Isolated and Non-Isolated Applications
- Gate Driver Capable of Up to 10 MHz Switching
- Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
- Supply Rail Undervoltage Lockout Protection
- Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
- Low Power Consumption
The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.
GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead-free package and can be easily mounted on PCBs.
The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.
The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5-1.5 V).
Technical documentation
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
LMG5200EVM-02 — LMG5200 GaN power stage evaluation module
LMG5200POLEVM-10 — LMG5200 GaN 48V to 1V point of load evaluation module
The LMG5200POLEVM-10 EVM is designed to evaluate the LMG5200 GaN power stage and the TPS53632G half-bridge point-of-load controller in a 48V to 1V application. This EVM implements the 48V-1V converter as a single-stage hard-switched half-bridge with current-doubler rectifier. The EVM (...)
BOOSTXL-3PHGANINV — 48-V Three-Phase Inverter With Shunt-Based In-Line Motor Phase Current Sensing Evaluation Module
The BOOSTXL-3PHGANINV evaluation module features a 48-V/10-A three-phase GaN inverter with precision in-line shunt-based phase current sensing for accurate control of precision drives such as servo drives.
MathWorks MATLAB & Simulink example models include the following:
LMG5200 TINA-TI Transient Reference Design (Rev. C)
TIDA-00909 — 48V/10A High Frequency PWM 3-Phase GaN Inverter Reference Design for High-Speed Drives
TIDA-00913 — 48V 3-Phase Inverter with Shunt-based In-line Motor Phase Current Sensing Reference Design
TIDM-02006 — Distributed multi-axis servo drive over fast serial interface (FSI) reference design
TIDM-02007 — Dual-axis motor drive using fast current loop (FCL) and SFRA on a single MCU reference design
PMP22089 — Half-bridge point-of-load converter reference design with GaN technology
PMP4486 — 48Vin Digital POL with 3 Outputs Reference Design
PMP4497 — LMG5200 48V to 1V/40A Single Stage Converter Reference Design
Package | Pins | CAD symbols, footprints & 3D models |
---|---|---|
QFM (MOF) | 9 | Ultra Librarian |
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