Design engineers faced with the challenges of reduced space and increased power demands are embracing gallium nitride (GaN) technology. By leveraging new topologies, switching frequencies and magnetic design options, GaN has enabled systems to reach unprecedented levels of power density and efficiency. However, these designs need to meet the industry’s expectation for reliability, availability of proven solutions and cost parity with silicon metal-oxide semiconductor field-effect transistors (MOSFETs).
TI has long been a leader and advocate in developing and implementing comprehensive methodology to ensure long and reliable operation and lifetimes of GaN devices under the harshest operating conditions. To achieve this, the traditional silicon methodology needs to be extended for GaN and its intrinsic characteristics. Additionally, stress testing needs to include the switching conditions of power management, which traditional silicon qualification does not address.
The power electronics industry recently reached an exciting milestone. The Joint Electron Device Engineering Council (JEDEC) announced the formation of a new committee: JC-70 Wide Bandgap Power Electronic Conversion Semiconductors. This committee’s charter is to standardize reliability and qualification procedures, data sheet elements and parameters, and test and characterization methods for GaN as well as silicon carbide (SiC). Having a common standard will enable the power industry to compare and contrast different GaN devices through a single lens. It will also help suppliers better differentiate their solutions and the merits of their technology.
TI is addressing the need for proven and ready-to-use solutions that include:
These solutions, as shown in Figure 1, are not just about 2x the power density. In every stage, GaN-based solutions reduce the number and/or size of both passive and active components (Figure 2), heat sinks, cooling requirements and physical space. These savings help you achieve system-cost parity with silicon MOSFETs with at least 2x the power density.
As GaN continues on its path forward, we at Texas Instruments are excited to be part of the journey.
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you permission to use these resources only for development of an application that uses the TI products described in the resource. Other reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources.
TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable warranties or warranty disclaimers for TI products.
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2023, Texas Instruments Incorporated