LMG3522R030-Q1 650V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features

AEC-Q100 qualified for automotive applications
- Temperature grade 1: –40°C to +125°C, T_A
- Junction temperature: –40°C to +150°C, T_J
650V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V supply
Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
Advanced power management
- Digital temperature PWM output
Top-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance