SLUSF82B January 2024 – November 2024 LMG3100R017 , LMG3100R044
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
Figure 8-2 shows a switching application where the slew rate on the switch node may be controlled by using resistors RVCCL and RVCCH. RVCCL may be used to slow down the turn-on of the Low Side GaN FET, and RVCCH may be used to slow down the turn-on of the High Side GaN FET. Using these resistors allows the system engineer to optimize the tradeoff between higher efficiency (faster slew rates) and lower ringing (slower slew rates).