SNOSDL1 December   2024 LMG3650R035

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Switching Parameters
      1. 7.1.1 Turn-On Times
      2. 7.1.2 Turn-Off Times
      3. 7.1.3 Drain-Source Turn-On and Turn-off Slew Rate
      4. 7.1.4 Zero-Voltage Detection Times (LMG3656R035 only)
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
      1. 8.2.1 LMG3650R035 Functional Block Diagram
      2. 8.2.2 LMG3651R035 Functional Block Diagram
      3. 8.2.3 LMG3656R035 Functional Block Diagram
      4. 8.2.4 LMG3657R035 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Drive Strength Adjustment
      2. 8.3.2 VDD Supply
      3. 8.3.3 Overcurrent and Short-Circuit Protection
      4. 8.3.4 Overtemperature Protection
      5. 8.3.5 UVLO Protection
      6. 8.3.6 Fault Reporting
      7. 8.3.7 Auxiliary LDO (LMG3651R035 Only)
      8. 8.3.8 Zero-Voltage Detection (ZVD) (LMG3656R035 Only)
      9. 8.3.9 Zero-Current Detection (ZCD) (LMG3657R035 Only)
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Slew Rate Selection
        2. 9.2.2.2 Signal Level-Shifting
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Using an Isolated Power Supply
      2. 9.3.2 Using a Bootstrap Diode
        1. 9.3.2.1 Diode Selection
        2. 9.3.2.2 Managing the Bootstrap Voltage
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
  • KLA|9
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.1 Overview

The LMG365xR035 is a high-performance power GaN device with integrated gate driver. The GaN device offers zero reverse recovery and ultra-low output capacitance, which enables high efficiency in bridge-based topologies.

The integrated driver ensures the device stays off for high drain slew rates. The integrated driver protects the GaN device from overcurrent, short-circuit, overtemperature, VDD undervoltage, and a high-impedance RDRV pin.

Unlike Si MOSFETs, GaN devices do not have a p-n junction from source to drain and thus have no reverse recovery charge. However, GaN devices still conduct from source to drain similar to a p-n junction body diode, but with higher voltage drop and higher conduction loss. Therefore, source-to-drain conduction time must be minimized while the LMG365xR035 GaN FET is turned off.