SNOS956E June   2001  – August 2014 LMH6654 , LMH6655

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1. 3.1 Input Voltage and Curernt Noise vs. Frequency (Vs= ±5V)
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Typical Characteristics
  7. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
        1. 7.2.1.1 Components Selection and Feedback Resistor
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Driving Capacitive Loads
        2. 7.2.2.2 Bias Current Cancellation
        3. 7.2.2.3 Total Input Noise vs. Source Resistance
          1. 7.2.2.3.1 Noise Figure
  8. 8 Power Supply Recommendations
    1. 8.1 Power Dissipation
  9. 9 Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Evaluation Boards
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
        1. 10.1.1.1 Related Links
    2. 10.2 Electrostatic Discharge Caution
    3. 10.3 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10 Device and Documentation Support

10.1 Documentation Support

10.1.1 Related Documentation

10.1.1.1 Related Links

The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy.

Table 1. Related Links

PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY
LMH6654 Click here Click here Click here Click here Click here
LMH6655 Click here Click here Click here Click here Click here

10.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

10.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.