SNOS956E June   2001  – August 2014 LMH6654 , LMH6655

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1. 3.1 Input Voltage and Curernt Noise vs. Frequency (Vs= ±5V)
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Typical Characteristics
  7. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
        1. 7.2.1.1 Components Selection and Feedback Resistor
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Driving Capacitive Loads
        2. 7.2.2.2 Bias Current Cancellation
        3. 7.2.2.3 Total Input Noise vs. Source Resistance
          1. 7.2.2.3.1 Noise Figure
  8. 8 Power Supply Recommendations
    1. 8.1 Power Dissipation
  9. 9 Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Evaluation Boards
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
        1. 10.1.1.1 Related Links
    2. 10.2 Electrostatic Discharge Caution
    3. 10.3 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VIN Differential ±1.2 V
Output Short Circuit Duration  See (3)
Supply Voltage (V+ − V−) 13.2 V
Voltage at Input pins V+ +0.5
V- -0.5		 V
Junction Temperature(4) 150 °C
Soldering Information Infrared or Convection (20 sec.) 235 °C
Wave Soldering (10 sec.) 260 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range −65 150 °C
V(ESD) Electrostatic discharge(2) Human body model (HBM),
per ANSI/ESDA/JEDEC JS-001, all pins(1)		 2000 V
Machine model (MM)(2) 200
(1) JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 200-V MM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions(1)

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply Voltage (V+ - V−) ±2.5 ±6.0 V
Operating Temperature Range −40 85 °C

6.4 Thermal Information

THERMAL METRIC(1) SOIC (D) VSSOP (DGK) SOT-23 (D) UNIT
8 PINS 8 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 172 235 265 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

±5V Electrical Characteristics

Unless otherwise specified, all limits ensured for V+ = +5V, V− = −5V, VCM = 0V, AV = +1, RF = 25Ω for gain = +1, RF = 402Ω for gain ≥ +2, and RL = 100Ω. Boldface limits apply at the temperature extremes.
PARAMETER TEST CONDITIONS MIN(6) TYP(5) MAX(6) UNIT
DYNAMIC PERFORMANCE
fCL Close Loop Bandwidth AV = +1 250 MHz
AV = +2 130
AV = +5 52
AV = +10 26
GBWP Gain Bandwidth Product AV ≥ +5 260 MHz
Bandwidth for 0.1 dB Flatness AV +1 18 MHz
φm Phase Margin 50 deg
SR Slew Rate (8) AV = +1, VIN = 2 VPP 200 V/µs
tS Settling Time
  0.01%		 AV = +1, 2V Step 25 ns
  0.1% 15 ns
tr Rise Time AV = +1, 0.2V Step 1.4 ns
tf Fall Time AV = +1, 0.2V Step 1.2 ns
DISTORTION and NOISE RESPONSE
en Input Referred Voltage Noise f ≥ 0.1 MHz 4.5 nV/√Hz
in Input-Referred Current Noise f ≥ 0.1 MHz 1.7 pA/√Hz
Second Harmonic Distortion AV = +1, f = 5 MHz −80 dBc
Third Harmonic Distortion VO = 2 VPP, RL = 100Ω −85
Xt Crosstalk (for LMH6655 only) Input Referred, 5 MHz, Channel-to-Channel −80 dB
DG Differential Gain AV = +2, NTSC, RL = 150Ω 0.01%
DP Differential Phase AV = +2, NTSC, RL = 150Ω 0.025 deg
INPUT CHARACTERISTICS
VOS Input Offset Voltage VCM = 0V −3
−4		 ±1 3
4		 mV
TC VOS Input Offset Average Drift VCM = 0V (7) 6 µV/°C
IB Input Bias Current VCM = 0V 5 12
18		 µA
IOS Input Offset Current VCM = 0V −1
−2		 0.3 1
2		 µA
RIN Input Resistance Common Mode 4 MΩ
Differential Mode 20 kΩ
CIN Input Capacitance Common Mode 1.8 pF
Differential Mode 1
CMRR Common Mode Rejection Ration Input Referred,
VCM = 0V to −5V		 70
68		 90 dB
CMVR Input Common- Mode Voltage Range CMRR ≥ 50 dB −5.15 −5.0 V
3.5 3.7
TRANSFER CHARACTERISTICS
AVOL Large Signal Voltage Gain VO = 4 VPP, RL = 100Ω 60
58		 67 dB
OUTPUT CHARACTERISTICS
VO Output Swing High No Load 3.4
3.2		 3.6 V
Output Swing Low No Load −3.9 −3.7
−3.5
Output Swing High RL = 100Ω 3.2
3.0		 3.4
Output Swing Low RL = 100Ω −3.6 −3.4
−3.2
ISC Short Circuit Current (3) Sourcing, VO = 0V
ΔVIN = 200 mV		 145
130		 280 mA
Sinking, VO = 0V
ΔVIN = 200 mV		 100
80		 185
IOUT Output Current Sourcing, VO = +3V 80 mA
Sinking, VO = −3V 120
RO Output Resistance AV = +1, f <100 kHz 0.08 Ω
POWER SUPPLY
PSRR Power Supply Rejection Ratio Input Referred,
VS = ±5V to ±6V		 60 76 dB
IS Supply Current (per channel) 4.5 6
7		 mA

5V Electrical Characteristics

Unless otherwise specified, all limits ensured for V+ = +5V, V− = −0V, VCM = 2.5V, AV = +1, RF = 25 Ω for gain = +1,
RF = 402Ω for gain ≥ +2, and RL = 100Ω to V+/2. Boldface limits apply at the temperature extremes.
PARAMETER TEST CONDITIONS MIN(6) TYP(5) MAX(6) UNIT
DYNAMIC PERFORMANCE
fCL Close Loop Bandwidth AV = +1 230 MHz
AV = +2 120
AV = +5 50
AV = +10 25
GBWP Gain Bandwidth Product AV ≥ +5 250 MHz
Bandwidth for 0.1 dB Flatness AV = +1 17 MHz
φm Phase Margin 48 deg
SR Slew Rate (8) AV = +1, VIN = 2 VPP 190 V/µs
tS Settling Time
  0.01%		 AV = +1, 2V Step 30 ns
  0.1% 20 ns
tr Rise Time AV = +1, 0.2V Step 1.5 ns
tf Fall Time AV = +1, 0.2V Step 1.35 ns
DISTORTION and NOISE RESPONSE
en Input Referred Voltage Noise f ≥ 0.1 MHz 4.5 nV/√Hz
in Input Referred Current Noise f ≥ 0.1 MHz 1.7 pA/√Hz
Second Harmonic Distortion AV = +1, f = 5 MHz −65 dBc
Third Harmonic Distortion VO = 2 VPP, RL = 100Ω −70
Xt Crosstalk (for LMH6655 only) Input Referred, 5 MHz −78 dB
INPUT CHARACTERISTICS
VOS Input Offset Voltage VCM = 2.5V −5
−6.5		 ±2 5
6.5		 mV
TC VOS Input Offset Average Drift VCM = 2.5V (7) 6 µV/°C
IB Input Bias Current VCM = 2.5V 6 12
18		 µA
IOS Input Offset Current VCM = 2.5V −2
−3		 0.5 2
3		 µA
RIN Input Resistance Common Mode 4 MΩ
Differential Mode 20 kΩ
CIN Input Capacitance Common Mode 1.8 pF
Differential Mode 1
CMRR Common Mode Rejection Ration Input Referred,
VCM = 0V to −2.5V		 70
68		 90 dB
CMVR Input Common Mode Voltage Range CMRR ≥ 50 dB −0.15 0 V
3.5 3.7
TRANSFER CHARACTERISTICS
AVOL Large Signal Voltage Gain VO = 1.6 VPP, RL = 100Ω 58
55		 64 dB
OUTPUT CHARACTERISTICS
VO Output Swing High No Load 3.6
3.4		 3.75 V
Output Swing Low No Load 0.9 1.1
1.3
Output Swing High RL = 100Ω 3.5
3.35		 3.70
Output Swing Low RL = 100Ω 1 1.3
1.45
ISC Short Circuit Current (3) Sourcing , VO = 2.5V
ΔVIN = 200 mV		 90
80		 170 mA
Sinking, VO = 2.5V
ΔVIN = 200 mV		 70
60		 140
IOUT Output Current Sourcing, VO = +3.5V 30 mA
Sinking, VO = 1.5V 60
RO Output Resistance AV = +1, f <100 kHz .08 Ω
POWER SUPPLY
PSRR Power Supply Rejection Ratio Input Referred ,
VS = ± 2.5V to ± 3V		 60 75 dB
IS Supply Current (per channel) 4.5 6
7		 mA
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics Table.
(2) Human body model, 1.5 kΩ in series with 100 pF. Machine model: 0Ω in series with 100 pF.
(3) Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature at 150°C.
(4) The maximum power dissipation is a function of TJ(MAX), RθJA and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) − TA)/RθJA. All numbers apply for packages soldered directly onto a PC board.
(5) Typical Values represent the most likely parametric norm.
(6) All limits are specified by testing or statistical analysis.
(7) Offset voltage average drift is determined by dividing the change in VOS at temperature extremes into the total temperature change.
(8) Slew rate is the slower of the rising and falling slew rates. Slew rate is rate of change from 10% to 90% of output voltage step.

6.5 Typical Characteristics

25°C, V+ = ±5 V, V− = −5, RF = 25 Ω for gain = +1, RF = 402 Ω for gain ≥ +2 and RL = 100 Ω, unless otherwise specified.
20016509.gif
Figure 1. Closed Loop Bandwidth (G = +1)
20016511.gif
Figure 3. Closed Loop Bandwidth (G = +5)
20016535.gif
Figure 5. Supply Current per Channel
vs. Supply Voltage
20016549.gifFigure 7. Offset Voltage
vs. Supply Voltage (VCM = 0V)
20016539.gifFigure 9. Offset Voltage
vs. Common Mode
20016537.gifFigure 11. Bias Current
vs. Common Mode Voltage
20016550.gifFigure 13. AOL, PSRR and CMRR
vs. Temperature
20016504.gifFigure 15. Inverting Large Signal Pulse Response
(VS = ±5V)
20016508.gifFigure 17. Non-Inverting Large Signal Pulse Response
(VS = ±5V)
20016507.gif
Figure 19. Non-Inverting Small Signal Pulse Response
(VS = ±5V)
20016503.gif
Figure 21. Inverting Small Signal Pulse Response
(VS = ±5V)
20016514.gif
Figure 23. Input Voltage and Current Noise
vs. Frequency (VS = ±5V)
20016518.gifFigure 25. Harmonic Distortion
vs. Frequency
G = +1, VO = 2 VPP, VS = ±5V
20016528.gifFigure 27. Harmonic Distortion
vs. Temperature
VS = ±5V, f = 5 MHz, VO = 2 VPP
20016530.gifFigure 29. Harmonic Distortion
vs. Gain
VS = ±5V, f = 5 MHz, VO = 2 VPP
20016522.gif
Figure 31. Harmonic Distortion
vs. Output Swing
(G = +2, VS = ±5V, f = 5 MHz)
20016564.gif
Figure 33. CMRR vs. Frequency
20016547.gif
Figure 35. Output Sourcing Current
20016562.gifFigure 37. CrossTalk
vs. Frequency (LMH6655 only)
20016527.gifFigure 39. Open Loop Gain and Phase
vs. Frequency
20016510.gif
Figure 2. Closed Loop Bandwidth (G = +2)
20016512.gif
Figure 4. Closed Loop Bandwidth (G = +10)
20016548.gif
Figure 6. Supply Current per Channel
vs. Temperature
20016532.gifFigure 8. Offset Voltage
vs. Common Mode
20016551.gifFigure 10. Bias Current and Offset Voltage
vs. Temperature
20016565.pngFigure 12. Bias Current
vs. Common Mode Voltage
20016502.gifFigure 14. Inverting Large Signal Pulse Response
(VS = 5V)
20016506.gifFigure 16. Non-Inverting Large Signal Pulse Response
(VS = 5V)
20016505.gif
Figure 18. Non-Inverting Small Signal Pulse Response
(VS = 5V)
20016501.gif
Figure 20. Inverting Small Signal Pulse Response
(VS = 5V)
20016513.gif
Figure 22. Input Voltage and Current Noise
vs. Frequency (VS = 5V)
20016517.gif
Figure 24. Harmonic Distortion
vs. Frequency
G = +1, VO = 2 VPP, VS = 5V
20016529.gifFigure 26. Harmonic Distortion
vs. Temperature
VS = 5V, f = 5 MHz, VO = 2 VPP
20016531.gifFigure 28. Harmonic Distortion
vs. Gain
VS = 5V, f = 5 MHz, VO = 2 VPP
20016559.gifFigure 30. Harmonic Distortion
vs. Output Swing
(G = +2, VS = 5V, f = 5 MHz)
20016516.gif
Figure 32. PSRR vs. Frequency
20016546.gif
Figure 34. Output Sinking Current
20016561.gif
Figure 36. CrossTalk
vs. Frequency (LMH6655 only)
20016563.gifFigure 38. Isolation Resistance
vs. Capacitive Load