SBOS997 August   2020  – MONTH  LMH9135

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

LMH9135 are high-performance, single-channel, differential input to single-ended output transmit radio frequency (RF) gain block amplifiers that support 3.2 – 4.2 GHz frequency band. The device can support the requirements for next generation 5G active antenna systems (AAS) or small-cell applications while driving the input of a power amplifier (PA). The RF amplifier provides 18 dB typical gain with good linearity performance of +31.5 dBm Output IP3, while maintaining less than 4 dB noise figure across the whole 1 dB bandwidth. The device is internally matched for 100-Ω differential input impedance providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at the input. Also, the device is internally matched for 50-Ω single-ended output impedance that is required to easily interface with a post-amplifier, surface acoustic wave (SAW) filter, or power amplifier (PA).

Operating on a single 3.3 V supply, the device consumes about 395 mW typical active power making it suitable for high-density 5G massive MIMO applications. Also, the device is available in a space saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating temperature of up to 105°C to provide a robust system design. There is a 1.8-V JEDEC compliant power down pin available for fast power down and power up of the device suitable for time division duplex (TDD) systems.

Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
LMH9135 WQFN (12) 2.00 mm × 2.00 mm
(1) For all available packages, see the orderable addendum at the end of the data sheet.
GUID-B7984424-DBFE-493F-8DA8-756F498356C9-low.gif LMH9135: Differential to Single Ended Amplifier