ANALOG SIGNAL PATH CHARACTERISTICS (DAC, Buffer Amplifier, Internal Reference) |
|
Resolution |
–25°C < TA < 120°C |
12 |
|
12 |
Bits |
|
Monotonic |
12 |
|
|
DNL |
Differential non-linearity |
RL = 100 kΩ, –25°C < TA < 120°C |
–0.99 |
|
1 |
LSB |
INL |
Integral non-linearity |
RL = 100 kΩ, –25°C < TA < 120°C |
−1.93 |
|
2.78 |
OE |
Offset error(1) |
LDMOS mode, RL = 100 kΩ, –25°C < TA < 120°C |
–14 |
|
14 |
mV |
LDMOS mode, RL = 100 kΩ |
|
±1 |
|
GaN mode, RL = 100 kΩ, –25°C < TA < 120°C |
–16.5 |
|
16.5 |
OETC |
Offset error temperature coefficient(1)(2) |
RL = 100 kΩ, –25°C < TA < 120°C |
|
|
43 |
μV/°C |
GE |
Gain error(1) |
RL = 100 kΩ, –25°C < TA < 120°C |
–0.72 |
|
0.74 |
%FS |
GETC |
Gain error temperature coefficient(1)(2) |
RL = 100 kΩ, –25°C < TA < 120°C |
|
|
20 |
ppm/°C |
REAOPC |
Residual error after one point calibration(1)(2)(3)(4) |
BASEx = 1638 (VDACX = 2 V at 24°C) –25°C < TA < 120°C |
–13.3 |
|
13.3 |
mV |
BASEx = 1638 (VDACX = 2 V at 24°C) |
|
±2.4 |
|
BASEx = 819 (VDACX = 1 V at 24°C) –25°C < TA < 120°C |
–11.3 |
|
11.3 |
BASEx = 819 (VDACX = 1 V at 24°C) |
|
±2.1 |
|
ZCO |
Zero code output (VDACx – VSSB) |
LDMOS mode, RL = 100 kΩ |
|
0 |
|
mV |
LDMOS mode, IOUT = 10 mA |
|
200 |
|
FSO |
Full-scale output at code 4095 (VDDB – VDACx) |
LDMOS mode, RL = 100 kΩ |
|
10 |
|
mV |
LDMOS mode, IOUT = –10 mA |
|
150 |
|
IO |
Continuous output current per channel allowed(5) |
TA = 125°C |
|
|
10 |
mA |
CL |
Load capacitance(5) |
RL = 2 kΩ or ∞, –25°C < TA < 120°C |
|
|
12 |
µF |
RL = 2 kΩ or ∞ |
|
10 |
|
|
DAC output resistance |
DACCODEx = 2048 |
|
3 |
|
Ω |
|
DAC settling time |
CL = 10 µF |
|
250 |
|
µs |
OUTPUT SWITCH DC CHARACTERISTICS |
RDRV |
On Resistance of the switch between DACx and FETDRVx |
–25°C < TA < 120°C |
|
|
6 |
Ω |
RG |
On Resistance of the switch between FETDRVx and VSSB |
|
|
11 |
|
TEMPERATURE SENSOR CHARACTERISTICS |
|
Resolution |
|
|
0.0625 |
|
°C/lsb |
TE |
Temperature sensor error(2) |
TA = –40°C to 120°C |
–3.2 |
|
3.2 |
°C |
|
Conversion time |
|
|
25 |
|
ms |
EEPROM |
|
Maximum EEPROM write cycles |
|
|
|
100 |
|
DIGITAL INPUT CHARACTERISTICS (DRVEN0, DRVEN1, SDA, and SCL) |
VIH |
Input high voltage |
–25°C < TA < 120°C |
0.7 × VIO |
|
|
V |
VIL |
Input low voltage |
–25°C < TA < 120°C |
|
|
0.3 × VIO |
|
Hysteresis |
|
|
0.2 × VIO |
|
CiND |
Input capacitance |
|
|
5 |
|
pF |
DIGITAL INPUT CHARACTERISTICS (A0, A1) |
VIH |
Input high voltage |
–25°C < TA < 120°C |
0.7 × VIO |
|
|
V |
VIL |
Input low voltage |
–25°C < TA < 120°C |
|
|
0.3 × VIO |
RUP |
Internal pullup resistance |
|
|
17 |
|
kΩ |
RDN |
Internal pulldown resistance |
|
|
17 |
|
|
Max external capacitance(5) |
|
|
|
30 |
pF |
DIGITAL OUTPUT CHARACTERISTICS (SDA) |
VOL |
Output low voltage |
IOUT = 4 mA, –25°C < TA < 120°C |
|
|
0.4 |
V |
IOUT = 4 mA |
|
0.16 |
|
ILEAK |
Open-drain output leakage current with output high(5) |
Current from the supply rail through the pullup resistor into the drain of the open-drain output device, –25°C < TA < 120°C |
|
|
±1 |
μA |
COUT |
Output capacitance |
|
|
4 |
|
pF |
SUPPLY CURRENT SPECIFICATIONS |
IDD |
|
Normal operation(6),(7) –25°C < TA < 120°C |
|
|
2.6 |
mA |
While executing EEPROM BURN(8) |
|
4 |
|
While transferring EEPROM content to operating memory(9) |
|
9 |
|
IVIO |
|
I2C inactive, –25°C < TA < 120°C |
|
|
3 |
µA |
I2C in fast mode, –25°C < TA < 120°C |
|
|
3.1 |
IVDDB |
|
LDMOS mode, RL = ∞, –25°C < TA < 120°C |
|
|
1.5 |
mA |
IVSSB |
|
GaN mode, RL = ∞, –25°C < TA < 120°C |
–1.4 |
|
|
PWR (Conv) |
Power consumption, conversion mode |
All output pins RL = ∞ |
|
20 |
|
mW |