SNVSAW2B April 2017 – December 2018 LP87524B-Q1 , LP87524J-Q1 , LP87524P-Q1
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.