SNVSBD3B August 2020 – May 2024 LP8864S-Q1
PRODUCTION DATA
A power line FET can be used to disconnect input power from boost input to protect the LP8864S-Q1 device and boost components in case an overcurrent event occurs. A P type MOSFET is used for the power-line FET. Voltage rating must be at least 25% higher than maximum input voltage level. Low RDSON is important to reduce power loss on the FET — less than 20mΩ is recommended. Current rating for the FET must be at least 25% higher than input peak current. Minimum Gate-to-Source voltage (VGS) to turn on transistor fully must be less than minimum input voltage; use a 20kΩ resistor between the pFET gate and source.