SNVSBD3B August 2020 – May 2024 LP8864S-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
General Electrical Characteristics | ||||||
IQ | Shutdown mode current, VDD pin | EN = L | 1 | 5 | µA | |
IQ | Active mode current, VDD pin(1) | FSW = 303 kHz, PWM = H, BOOST-FET IPD25N06S4L-30, Charge Pump Disabled | 15 | 65 | mA | |
IQ | Active mode current, VDD pin(1) | FSW = 2200 kHz, PWM = H, BOOST-FET IPD25N06S4L-30, Charge Pump Disabled | 40 | 75 | mA | |
IQ | Active mode current, VDD pin(1) | FSW = 303 kHz, PWM = H, BOOST-FET IPD25N06S4L-30, Charge Pump Enabled | 20 | 91 | mA | |
IQ | Active mode current, VDD pin(1) | FSW = 2200 kHz, PWM = H, BOOST-FET IPD25N06S4L-30, Charge Pump Enabled | 65 | 104 | mA | |
CPUMP and LDO Electrical Characteristics | ||||||
VCPUMP | Voltage accuracy | VDD = 3.0 to 3.6V; ILOAD = 1 to 50mA | 4.8 | 5 | 5.2 | V |
fCP | CP switching frequency | 387 | 417 | 447 | kHz | |
VCPUMP_UVLO | VCPUMP UVLO threshold | VCPUMP falling edge | 3.95 | 4.2 | 4.4 | V |
VCPUMP_UVLO | VCPUMP UVLO threshold | VCPUMP rising edge | 4.15 | 4.4 | 4.6 | V |
VCPUMP_HYS | VCPUMP UVLO hysteresis | 0.1 | 0.2 | V | ||
TSTART_UP | Charge pump startup time | CCPUMP = 10µF | 1000 | 2000 | µs | |
Protection Electrical Characteristics | ||||||
VDDUVLO_F | VDD UVLO threshold | VDD falling | 2.68 | 2.8 | 2.92 | V |
VDDUVLO_R | VDD UVLO threshold | VDD rising | 3.0 | V | ||
VDDUVLO_H | VDD UVLO hysteresis | 0.1 | V | |||
VINUVLO_TH | UVLO pin threshold | VUVLO falling | 0.753 | 0.777 | 0.801 | V |
IUVLO | UVLO pin bias current | VUVLO = VUVLO_TH + 50mV | –5 | µA | ||
VINOVP_TH | OVP threshold | VSENSE_P rising | 40.8 | 43 | 45.2 | V |
VINOVP_HYS | OVP hysteresis | 1.7 | V | |||
VINOCP_TH | Input OCP threshold | RISENSE = 20mΩ | 187 | 220 | 253 | mV |
TSD | Thermal shutdown threshold(1) | Temperature rising | 150 | 165 | 180 | °C |
TSD | Thermal shutdown hysteresis(1) | 20 | °C | |||
ISD_LEAKAGE | SD leakage current | VSD = 48V | 1 | µA | ||
ISD | SD pull down current | RSD = 20kΩ | 250 | 325 | 400 | µA |
VFB_OVPL | FB pin - Boost OVP low threshold | 1.423 | V | |||
VFB_OVPH | FB pin - Boost OVP high threshold | 1.76 | V | |||
VFB_UVP | FB pin - Boost OCP threshold | 0.886 | V | |||
VBST_OVPH | Discharge pin - Boost OVP high threshold | 48.5 | 50 | 51.8 | V | |
Input PWM Electrical Characteristics | ||||||
IPWM_LEAKAGE | PWM leakage current | VPWM = 5V | 1 | µA | ||
fPWM_IN | PWM input frequency | 100 | 20000 | Hz | ||
tPWM_MIN_ON | PWM input minimum on-time | Direct PWM mode | 200 | ns | ||
tPWM_MIN_ON | PWM input minimum on-time | Phase Shift PWM mode, Hybrid mode, Current Dimming mode | 200 | 220 | ns | |
PWM_INRES | PWM input resolution | fPWM_IN = 100Hz | 16 | bit | ||
PWM_INRES | PWM input resolution | fPWM_IN = 20kHz | 10 | bit | ||
LED Current Sink and LED PWM Electrical Characteristics | ||||||
ILEAKAGE | Leakage current on OUTx | OUTx = VOUT = 45V, EN= L | 0.1 | 2.5 | µA | |
VISET | ISET voltage | 1.17 | 1.21 | 1.25 | V | |
IMAX | Maximum LED sink current | OUTx | 200 | mA | ||
VISET_UVLO | ISET pin undervoltage | 0.97 | 1 | 1.03 | V | |
RISET | ISET Resistor range | IOUT = 30mA to 200mA | 15.6 | 104 | kΩ | |
ILED_LIMIT | LED current limit when ISET pin short to GND | 280 | mA | |||
IACC | LED sink current accuracy | RISET = 15.6kΩ, IOUT = 150mA, PWM = 100% | -4 | 4 | % | |
IMATCH | LED sink current matching | RISET = 15.6kΩ, IOUT = 150mA, PWM = 100% | 1 | 3.5 | % | |
fDIM | LED dimming frequency | PWM_FSET =3.92kΩ | 141 | 152 | 163 | Hz |
fDIM | LED dimming frequency | PWM_FSET =4.75kΩ | 283 | 305 | 327 | |
fDIM | LED dimming frequency | PWM_FSET =5.76kΩ | 567 | 610 | 653 | |
fDIM | LED dimming frequency | PWM_FSET =7.87kΩ | 1135 | 1221 | 1307 | |
fDIM | LED dimming frequency | PWM_FSET =11kΩ | 2270 | 2441 | 2612 | |
fDIM | LED dimming frequency | PWM_FSET =17.8kΩ | 4541 | 4883 | 5225 | |
fDIM | LED dimming frequency | PWM_FSET =42.4kΩ | 9082 | 9766 | 10450 | |
fDIM | LED dimming frequency | PWM_FSET =124kΩ | 18163 | 19531 | 20899 | |
DIM | Dimming ratio | fPWM_OUT = 152Hz | 32000:1 | |||
DIM | Dimming ratio | fPWM_OUT = 4.88kHz | 1000:1 | |||
VHEADROOM | LED sink headroom | 0.7 | V | |||
VHEADROOM_HYS | LED sink headroom hysteresis | 0.8 | V | |||
VLEDSHORT | LED internal short threshold | 5.4 | V | |||
VSHORTGND | LED short to ground threshold | 0.24 | V | |||
tPWM_OUT | LED output minimum pulse | 200 | ns | |||
Boost Converter Electrical Characteristics | ||||||
fSW | Switching Frequency | BST_FSET =7.87kΩ | 93 | 100 | 107 | kHz |
fSW | Switching Frequency | BST_FSET =4.75kΩ | 186 | 200 | 214 | kHz |
fSW | Switching Frequency | BST_FSET =5.76kΩ | 281 | 303 | 325 | kHz |
fSW | Switching Frequency | BST_FSET =3.92kΩ | 372 | 400 | 428 | kHz |
fSW | Switching Frequency | BST_FSET =11kΩ | 465 | 500 | 535 | kHz |
fSW | Switching Frequency | BST_FSET =17.8kΩ | 1690 | 1818 | 1946 | kHz |
fSW | Switching Frequency | BST_FSET =42.4kΩ | 1860 | 2000 | 2140 | kHz |
fSW | Switching Frequency | BST_FSET =124kΩ | 2066 | 2222 | 2378 | kHz |
VISNS | External FET current limit | VISNS threshold, RSENSE = 15 to 50mΩ | 180 | 200 | 220 | mV |
ISEL_MAX | IDAC maximum current | VDD = 3.3V | 36.4 | 38.7 | 40.2 | µA |
RDS_ONH | RDSON of high-side FET to gate driver | VGD/(RDS_ON + total resistance to gate input of SW FET) must not be higher than 2.5A | 1.4 | Ω | ||
RDS_ONL | RDSON of low-side FET to gate driver | VGD/(RDS_ON + total resistance to gate input of SW FET) must not be higher than 2.5A | 0.75 | Ω | ||
tSTARTUP | Start-up time | Delay from beginning of boost Soft-start to when LED drivers can begin | 50 | ms | ||
TON | Minimum switch on-time | 150 | ns | |||
TOFF | Minimum switch off time | 150 | ns |