SDLS975 April   2024 LSF0002

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics (Translating Down): BN = 3.3V
    7. 5.7 Switching Characteristics (Translating Down): BN = 2.5V
    8. 5.8 Switching Characteristics (Translating Up): BN = 3.3V
    9. 5.9 Switching Characteristics (Translating Up):BN = 2.5V
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Auto Bidirectional Voltage Translation
      2. 7.3.2 VBIAS/ Enable
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Open-Drain Interface (I2C, PMBus, SMBus, and GPIO)
        1. 8.2.1.1 Design Requirements
          1. 8.2.1.1.1 Enable and Disable Guidelines
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Bidirectional Translation
          2. 8.2.1.2.2 Pull-Up Resistor Sizing
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Mixed-Mode Voltage Translation
      3. 8.2.3 Voltage Translation for Vref_B < Vref_A + 0.8V
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DTQ|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.5 Electrostatic Discharge Caution

LSF0002 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.