over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)PARAMETER | TJ | MIN | TYP | MAX | UNIT |
---|
| Read and write endurance | | 1015 | | | cycles |
tRetention | Data retention duration | 25°C | 100 | | | years |
70°C | 40 | | |
85°C | 10 | | |
IWRITE | Current to write into FRAM(1) | | | IREAD | | nA |
IERASE | Erase current(2) | | | N/A(3) | | nA |
tWRITE | Write time(4) | | | tREAD | | ns |
tREAD | Read time(5) | NWAITSx = 0 | | | 1 / fSYSTEM | | ns |
NWAITSx = 1 | | 2 / fSYSTEM | |
(1) Writing to FRAM does not require a setup sequence or additional power when compared to reading from FRAM. The FRAM read current IREAD is included in the active mode current consumption, IAM,FRAM.
(2) FRAM does not require a special erase sequence.
(3) N/A = Not applicable
(4) Writing into FRAM is as fast as reading.
(5) The maximum read (and write) speed is specified by fSYSTEM using the appropriate wait state settings (NWAITSx).