SLASF11C February   2023  – October 2023 MSPM0G1106 , MSPM0G1107

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Pin Attributes
    3. 6.3 Signal Descriptions
    4. 6.4 Connections for Unused Pins
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Characteristics
      1. 7.5.1 RUN/SLEEP Modes
      2. 7.5.2 STOP/STANDBY Modes
      3. 7.5.3 SHUTDOWN Mode
    6. 7.6  Power Supply Sequencing
      1. 7.6.1 POR and BOR
      2. 7.6.2 Power Supply Ramp
    7. 7.7  Flash Memory Characteristics
    8. 7.8  Timing Characteristics
    9. 7.9  Clock Specifications
      1. 7.9.1 System Oscillator (SYSOSC)
        1. 7.9.1.1 SYSOSC Typical Frequency Accuracy
      2. 7.9.2 Low Frequency Oscillator (LFOSC)
      3. 7.9.3 System Phase Lock Loop (SYSPLL)
      4. 7.9.4 Low Frequency Crystal/Clock
      5. 7.9.5 High Frequency Crystal/Clock
    10. 7.10 Digital IO
      1. 7.10.1 Electrical Characteristics
      2. 7.10.2 Switching Characteristics
    11. 7.11 Analog Mux VBOOST
    12. 7.12 ADC
      1. 7.12.1 Electrical Characteristics
      2. 7.12.2 Switching Characteristics
      3. 7.12.3 Linearity Parameters
      4. 7.12.4 Typical Connection Diagram
    13. 7.13 Temperature Sensor
    14. 7.14 VREF
      1. 7.14.1 Voltage Characteristics
      2. 7.14.2 Electrical Characteristics
    15. 7.15 GPAMP
      1. 7.15.1 Electrical Characteristics
      2. 7.15.2 Switching Characteristics
    16. 7.16 I2C
      1. 7.16.1 I2C Timing Diagram
      2. 7.16.2 I2C Characteristics
      3. 7.16.3 I2C Filter
    17. 7.17 SPI
      1. 7.17.1 SPI
      2. 7.17.2 SPI Timing Diagram
    18. 7.18 UART
    19. 7.19 TIMx
    20. 7.20 Emulation and Debug
      1. 7.20.1 SWD Timing
  9. 8 Detailed Description
    1. 8.1  CPU
    2. 8.2  Operating Modes
      1. 8.2.1 Functionality by Operating Mode (MSPM0G110x)
    3. 8.3  Power Management Unit (PMU)
    4. 8.4  Clock Module (CKM)
    5. 8.5  DMA
    6. 8.6  Events
    7. 8.7  Memory
      1. 8.7.1 Memory Organization
      2. 8.7.2 Peripheral File Map
      3. 8.7.3 Peripheral Interrupt Vector
    8. 8.8  Flash Memory
    9. 8.9  SRAM
    10. 8.10 GPIO
    11. 8.11 IOMUX
    12. 8.12 ADC
    13. 8.13 Temperature Sensor
    14. 8.14 VREF
    15. 8.15 GPAMP
    16. 8.16 CRC
    17. 8.17 UART
    18. 8.18 I2C
    19. 8.19 SPI
    20. 8.20 WWDT
    21. 8.21 RTC
    22. 8.22 Timers (TIMx)
    23. 8.23 Device Analog Connections
    24. 8.24 Input/Output Diagrams
    25. 8.25 Serial Wire Debug Interface
    26. 8.26 Bootstrap Loader (BSL)
    27. 8.27 Device Factory Constants
    28. 8.28 Identification
  10. 9 Applications, Implementation, and Layout
    1. 9.1 Typical Application
      1. 9.1.1 Schematic
  11. 10Device and Documentation Support
    1. 10.1 Getting Started and Next Steps
    2. 10.2 Device Nomenclature
    3. 10.3 Tools and Software
    4. 10.4 Documentation Support
    5. 10.5 Support Resources
    6. 10.6 Trademarks
    7. 10.7 Electrostatic Discharge Caution
    8. 10.8 Glossary
  12. 11Mechanical, Packaging, and Orderable Information
  13. 12Revision History

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.7 Flash Memory Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Supply
VDDPGM/ERASE Program and erase supply voltage 1.62 3.6 V
IDDERASE Supply current from VDD during erase operation Supply current delta 10 mA
IDDPGM Supply current from VDD during program operation Supply current delta 10 mA
Endurance
NWEC(LOWER) Erase/program cycle endurance (lower 32kB flash) (1) 100 k cycles
NWEC(UPPER) Erase/program cycle endurance (remaining flash) (1) 10 k cycles
NE(MAX) Total erase operations before failure (2) 802 k erase operations
NW(MAX) Write operations per word line before sector erase (3) 83 write operations
Retention
tRET_85 Flash memory data retention -40°C <= Tj <= 85°C 60 years
tRET_105 Flash memory data retention -40°C <= Tj <= 105°C 11.4 years
Program and Erase Timing
tPROG (WORD, 64) Program time for flash word (4) (6) 50 275 µs
tPROG (SEC, 64) Program time for 1kB sector (5) (6) 6.4 ms
tERASE (SEC) Sector erase time ≤2k erase/program cycles, Tj≥25°C 4 20 ms
tERASE (SEC) Sector erase time ≤10k erase/program cycles, Tj≥25°C 20 150 ms
tERASE (SEC) Sector erase time <10k erase/program cycles 20 200 ms
tERASE (BANK) Bank erase time <10k erase/program cycles 22 220 ms
(1) The lower 32kB flash address space supports higher erase/program endurance to enable EEPROM emulation applications. On devices with <=32kB flash memory, the entire flash memory supports NWEC(LOWER) erase/program cycles.
(2) Total number of cumulative erase operations supported by the flash before failure. A sector erase or bank erase operation is considered to be one erase operation.
(3) Maximum number of write operations allowed per word line before the word line must be erased. If additional writes to the same word line are required, a sector erase is required once the maximum number of write operations per word line is reached.
(4) Program time is defined as the time from when the program command is triggered until the command completion interrupt flag is set in the flash controller.
(5) Sector program time is defined as the time from when the first word program command is triggered until the final word program command completes and the interrupt flag is set in the flash controller.  This time includes the time needed for software to load each flash word (after the first flash word) into the flash controller during programming of the sector.
(6) Flash word size is 64 data bits (8 bytes). On devices with ECC, the total flash word size is 72 bits (64 data bits plus 8 ECC bits).