SLASEX0D October 2022 – January 2024 MSPM0L1303 , MSPM0L1304 , MSPM0L1305 , MSPM0L1306 , MSPM0L1343 , MSPM0L1344 , MSPM0L1345 , MSPM0L1346
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
MSPM0Lxx MCUs include a low-power high-performance SRAM memory with zero wait state access across the supported CPU frequency range of the device. SRAM memory can be used for storing volatile information such as the call stack, heap, global data, and code. The SRAM memory content is fully retained in run, sleep, stop, and standby operating modes and is lost in shutdown mode. A write protection mechanism is provided to allow the application to prevent unintended modifications to a portion of the SRAM memory. SRAM write protection is useful when placing executable code into SRAM to provide a level of protection against unintentional overwrites of code by either the CPU or DMA. Placing code in SRAM can improve performance of critical loops by enabling zero wait state operation and lower power consumption.