SBOS705D January   2016  – Feburary 2019 MUX36D04 , MUX36S08

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      Leakage Current vs Temperature
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions: MUX36S08
    2.     Pin Functions: MUX36D04
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: Dual Supply
    6. 7.6 Electrical Characteristics: Single Supply
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1  Truth Tables
    2. 8.2  On-Resistance
    3. 8.3  Off-Leakage Current
    4. 8.4  On-Leakage Current
    5. 8.5  Differential On-Leakage Current
    6. 8.6  Transition Time
    7. 8.7  Break-Before-Make Delay
    8. 8.8  Turn-On and Turn-Off Time
    9. 8.9  Charge Injection
    10. 8.10 Off Isolation
    11. 8.11 Channel-to-Channel Crosstalk
    12. 8.12 Bandwidth
    13. 8.13 THD + Noise
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Ultralow Leakage Current
      2. 9.3.2 Ultralow Charge Injection
      3. 9.3.3 Bidirectional Operation
      4. 9.3.4 Rail-to-Rail Operation
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Related Links
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Community Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.3.2 Ultralow Charge Injection

The MUX36xxx have a simple transmission gate topology, as shown in Figure 39. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed.

MUX36S08 MUX36D04 Transmission_Gate.gifFigure 39. Transmission Gate Topology

The MUX36xxx have special charge-injection cancellation circuitry that reduces the source-to-drain charge injection to as low as 0.3 pC at VS = 0 V, and ±0.6 pC in the full signal range, as shown in Figure 40.

MUX36S08 MUX36D04 C025_SBOS705.pngFigure 40. Source-to-Drain Charge Injection vs Source or Drain Voltage

The drain-to-source charge injection becomes important when the device is used as a demultiplexer (demux), where D becomes the input and Sx becomes the output. Figure 41 shows the drain-to-source charge injection across the full signal range.

MUX36S08 MUX36D04 C011_SBOS705.pngFigure 41. Drain-to-Source Charge Injection vs Source or Drain Voltage