SBOS512E March   2010  – November 2020 OPA2365-Q1 , OPA365-Q1

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Characteristics
      2. 7.3.2 Basic Amplifier Configurations
      3. 7.3.3 Input and ESD Protection
      4. 7.3.4 Rail-to-Rail Input
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Capacitive Loads
      2. 8.1.2 Achieving an Output Level of Zero Volts (0 V)
      3. 8.1.3 Active Filtering
      4. 8.1.4 Driving an ADS7822-Q1 Analog-to-Digital Converter
      5. 8.1.5 Driving ADS1115-Q1 Analog-to-Digital Converter
    2. 8.2 Typical Application
      1. 8.2.1 Fast Settling Peak Detector
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Bandpass Filter 1.5 kHz to 160 kHz and 40-db Flat Gain
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Thermal Information

THERMAL METRIC(1)OPA2365-Q1OPA365-Q1UNIT
D (SOIC)DBV (SOT-23)
8 PINS5 PINS
RθJAJunction-to-ambient thermal resistance115.5208.8°C/W
RθJC(top)Junction-to-case (top) thermal resistance60.1123.7°C/W
RθJBJunction-to-board thermal resistance56.954.6°C/W
ψJTJunction-to-top characterization parameter9.537.2°C/W
ψJBJunction-to-board characterization parameter56.336.3°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.