SBOS410M June   2007  – December 2024 REF5010 , REF5020 , REF5025 , REF5030 , REF5040 , REF5045 , REF5050

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics REF50
    6. 6.6 Electrical Characteristics REF50EI
    7. 6.7 Typical Characteristics: REF50xxI, REF50xxAI
    8. 6.8 Typical Characteristics: REF50xxEI
  8. 7 Parameter Measurement Information
    1. 7.1 Solder Heat Shift
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Temperature Monitoring
      2. 8.3.2 Temperature Drift
      3. 8.3.3 Thermal Hysteresis
      4. 8.3.4 Noise Performance
      5. 8.3.5 Long-Term Stability
      6. 8.3.6 Output Adjustment Using the TRIM/NR Pin
    4. 8.4 Device Functional Modes
      1. 8.4.1 Basic Connections
      2. 8.4.2 Supply Voltage
      3. 8.4.3 Negative Reference Voltage
  10. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 16-Bit, 250-KSPS Data Acquisition System
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Power Dissipation
  13. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Glossary
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.5 Long-Term Stability

Due to aging and environmental effects, all semiconductor devices experience physical changes of the semiconductor die and the packaging material over time. These changes and the associated package stress on the die cause the output voltage in precision voltage references to deviate over time. The value of such change is specified in the data sheet by a parameter called the long-term stability (also known as the long-term drift (LTD)). Equation 5 shows how LTD is calculated. Note that the LTD value is positive if the output voltage drifts higher over time and negative if the voltage drifts lower over time. Figure 6-23 through Figure 6-30 show the drift of the output voltage for REF50xx over the first 4000 operating hours.

Equation 5. REF5010 REF5020 REF5025 REF5030 REF5040 REF5045 REF5050

where

  • LTD(ppm)|t=n = long-term stability (in units of ppm)
  • VOUT|t=0 = output voltage at time = 0 hr
  • VOUT|t=n = output voltage at time = n hr