2 Revision History
Changes from February 12, 2013 to October 28, 2015
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Document organization and structure changes throughout, including addition of section numberingGo
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Added Section 1.2, Applications Go
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Added Device Information tableGo
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Moved functional block diagram to Section 1.4Go
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Moved Table 3-1, Family Members, to Section 3, Device CharacteristicsGo
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Added Section 5.2, ESD RatingsGo
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Added note to the CVCORE parameter in Section 5.3, Recommended Operating ConditionsGo
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Added Section 5.8, Thermal Resistance CharacteristicsGo
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Corrected spelling of MRG bits in fMCLK,MRG parameter symbol and description in Section 5.38, Flash MemoryGo
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Changed the "RF crystal oscillator only" test conditions and added note in Section 5.40.2, Current Consumption, Reduced-Power Modes Go
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Changed the TYP value of the "High-bit transmit frequency" parameter in Section 5.41.2, Resonant Circuits – LF Front End, from 134.2 to 124.2Go
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Changed the limits for the trimming capacitor parameters CTmax, CT1, CT2, CT3, CT4, CT5, CT6, and CT7 in Section 5.41.4, Resonant Circuit Capacitor – LF Front EndGo
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Changed all instances of "bootstrap loader" to "bootloader"Go
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Corrected spelling of NMIIFG (added missing "I") in Table 6-10, System Module Interrupt Vector Registers Go
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Added Section 8, Device and Documentation SupportGo
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Added Section 9, Mechanical, Packaging, and Orderable InformationGo