SCES604J SEPTEMBER   2004  – December 2016 SN74AUP1G00

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Switching Characteristics, CL = 5 pF
    7. 6.7  Switching Characteristics, CL = 10 pF
    8. 6.8  Switching Characteristics, CL = 15 pF
    9. 6.9  Switching Characteristics, CL = 30 pF
    10. 6.10 Operating Characteristics
    11. 6.11 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Propagation Delays, Setup and Hold Times, and Pulse Width
    2. 7.2 Enable and Disable Times
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DPW|5
  • DBV|5
  • DSF|6
  • DCK|5
  • YFP|6
  • DRL|5
  • DRY|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8 Detailed Description

8.1 Overview

This is a single 2-input positive-NAND gate that is designed in Texas Instrument’s ultra-low power technology. It performs the Boolean function Y = A × B or Y = A + B in positive logic.

The AUP family of devices has quiescent power consumption less than 1 µA and comes in the ultra small DPW package. The DPW package technology is a major breakthrough in IC packaging. Its tiny 0.64 mm square footprint saves significant board space over other package options while still retaining the traditional manufacturing friendly lead pitch of 0.5 mm.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered. The Ioff feature also allows for live insertion.

8.2 Functional Block Diagram

SN74AUP1G00 lo_dgm_ces604.gif
Figure 5. Logic Diagram (Positive Logic)

8.3 Feature Description

  • Wide operating VCC range of 0.8 V to 3.6 V
  • 3.6-V I/O tolerant to support down translation
  • Input hysteresis allows slow input transition and better switching noise immunity at the input
  • Ioff feature allows voltages on the inputs and outputs when VCC is 0 V
  • Low noise due to slower edge rates

8.4 Device Functional Modes

Table 1 shows the functional modes of the SN74AUP1G00 device.

Table 1. Function Table

INPUTS OUTPUT
Y
A B
L L H
L H H
H L H
H H L