SCES595N JULY   2004  – July 2017 SN74AUP1G125

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics, TA = 25°C
    6. 6.6  Electrical Characteristics, TA = -40°C to +85°C
    7. 6.7  Switching Characteristics, CL = 5 pF
    8. 6.8  Switching Characteristics, CL = 10 pF
    9. 6.9  Switching Characteristics, CL = 15 pF
    10. 6.10 Switching Characteristics, CL = 30 pF
    11. 6.11 Operating Characteristics
    12. 6.12 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Balanced High-Drive CMOS Push-Pull Outputs
      2. 8.3.2 Standard CMOS Inputs
      3. 8.3.3 Clamp Diodes
      4. 8.3.4 Partial Power Down (Ioff)
      5. 8.3.5 Over-voltage Tolerant Inputs
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

9.1 Application Information

The SN74AUP1G125 device is a high-drive CMOS device that is used as a output enabled buffer with a high output drive, such as an LED application. The device can produce 24 mA of drive current at 3.3 V, which is ideal for driving multiple outputs and good for high-speed applications up to 100 MHz. The inputs are 5.5-V tolerant, allowing it to translate down to VCC.

9.2 Typical Application

SN74AUP1G125 led_app.gif Figure 5. Application Schematic

9.2.1 Design Requirements

This device uses CMOS technology and has balanced output drive. Take care to avoid bus contention because it can drive currents that would exceed maximum limits. The high drive also creates fast edges into light loads so routing and load conditions should be considered to prevent ringing.

9.2.2 Detailed Design Procedure

  1. Recommended Input Conditions
  2. Recommended Output Conditions
    • Load currents should not exceed (IO max) per output and should not exceed (Continuous current through VCC or GND) total current for the part. These limits are located in the Absolute Maximum Ratings table.
    • Outputs should not be pulled above VCC.

9.2.3 Application Curve

SN74AUP1G125 exc_ces612.gif Figure 6. Switching Characteristics at 25 MHz