SCLS737E September   2013  – July 2024 SN74LV1T00

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Related Products
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Operating Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Clamp Diode Structure
      2. 8.3.2 Balanced CMOS Push-Pull Outputs
      3. 8.3.3 LVxT Enhanced Input Voltage
        1. 8.3.3.1 Down Translation
        2. 8.3.3.2 Up Translation
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Power Supply Recommendations
    2. 9.2 Layout
      1. 9.2.1 Layout Guidelines
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.1 Overview

The SN74LV1T00 contains one independent dual input NAND gate with extended voltage operation to allow for level translation. Each gate performs the Boolean function Y = A ● B in positive logic. The output level is referenced to the supply voltage (VCC) and supports 1.8-V, 2.5-V, 3.3-V, and 5-V CMOS levels.