SCES929A January   2022  – May 2022 SN74LXC2T45-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Switching Characteristics: Tsk, TMAX
    7. 6.7  Switching Characteristics, VCCA = 1.2 ± 0.1 V
    8. 6.8  Switching Characteristics, VCCA = 1.5 ± 0.1 V
    9. 6.9  Switching Characteristics, VCCA = 1.8 ± 0.15 V
    10. 6.10 Switching Characteristics, VCCA = 2.5 ± 0.2 V
    11. 6.11 Switching Characteristics, VCCA = 3.3 ± 0.3 V
    12. 6.12 Switching Characteristics, VCCA = 5.0 ± 0.5 V
    13. 6.13 Operating Characteristics
    14. 6.14 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Load Circuit and Voltage Waveforms
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 CMOS Schmitt-Trigger Inputs with Integrated Pulldowns
        1. 8.3.1.1 I/O's with Integrated Dynamic Pull-Down Resistors
        2. 8.3.1.2 Control Inputs with Integrated Static Pull-Down Resistors
      2. 8.3.2 Balanced High-Drive CMOS Push-Pull Outputs
      3. 8.3.3 Partial Power Down (Ioff)
      4. 8.3.4 VCC Isolation and VCC Disconnect (Ioff-float)
      5. 8.3.5 Over-Voltage Tolerant Inputs
      6. 8.3.6 Glitch-Free Power Supply Sequencing
      7. 8.3.7 Negative Clamping Diodes
      8. 8.3.8 Fully Configurable Dual-Rail Design
      9. 8.3.9 Supports High-Speed Translation
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Enable Times
    3. 9.3 Typical Application
      1. 9.3.1 Design Requirements
      2. 9.3.2 Detailed Design Procedure
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DCU|8
  • DTT|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.1.1 I/O's with Integrated Dynamic Pull-Down Resistors

Input circuits of the data I/O's are always active even when the device is disabled. It is recommended to keep a valid voltage level at the I/O's to avoid high current consumption. To help avoid floating inputs on the I/O's during disabling, this device has 100-kΩ typical integrated weak dynamic pull-downs on all data I/O's. When the device is disabled, the dynamic pull-downs are activated for only a short period of time to help drive and keep low any floating inputs before the device I/O's become high impedance. If the I/O lines are to be floated after the device is disabled, then it is recommended to keep them at a valid input voltage level using external pull-downs. This feature is ideal for loads of 30 pF or less. If greater capactive loading is present then external pull-downs are recommended. If an external pull-up is required, it should be no larger than 15 kΩ to avoid contention with the 100 kΩ internal pull-down.