SLLS040I August   1987  – January 2023 SN65ALS176 , SN75ALS176 , SN75ALS176A , SN75ALS176B

PRODUCTION DATA  

  1. 1 Features
  2. 2 Description
  3. 3 Revision History
  4. 4 Pin Configuration and Functions
  5. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  Recommended Operating Conditions
    3. 5.3  Thermal Information
    4. 5.4  Electrical Characteristics - Driver
    5. 5.5  Switching Characteristics - Driver
    6. 5.6  Switching Characteristics - Driver
    7. 5.7  Symbol Equivalents
    8. 5.8  Electrical Characteristics - Receiver
    9. 5.9  Switching Characteristics - Receiver
    10. 5.10 Switching Characteristics - Receiver
    11. 5.11 Typical Characteristics
  6. 6 Parameter Measurement Information
  7. 7 Detailed Description
    1. 7.1 Functional Block Diagram
    2. 7.2 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
  9. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • P|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.5 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.