SNLS692B December   2021  – December 2023 SN75LVPE5421

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 DC Electrical Characteristics
    6. 5.6 High Speed Electrical Characteristics
    7. 5.7 SMBUS/I2C Timing Characteristics
    8. 5.8 Typical Characteristics
    9. 5.9 Typical Jitter Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Five-Level Control Inputs
      2. 6.3.2 Linear Equalization
      3. 6.3.3 Flat Gain
      4. 6.3.4 Receiver Detect State Machine
    4. 6.4 Device Functional Modes
      1. 6.4.1 Active PCIe Mode
      2. 6.4.2 Active Buffer Mode
      3. 6.4.3 Standby Mode
    5. 6.5 Programming
      1. 6.5.1 Pin Mode
      2. 6.5.2 SMBUS/I2C Register Control Interface
        1. 6.5.2.1 Shared Registers
        2. 6.5.2.2 Channel Registers
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 PCIe x8 Lane Switching
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
      2. 7.2.2 Protocol Agnostic Linear Redriver for High Speed Interfaces
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RUA|42
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2 kV may actually have higher performance.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.