SLASEH7H October   2019  – January 2023 TAS5825M

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
      1. 7.7.1 Bridge Tied Load (BTL) Configuration Curves with Hybrid Modulation
      2. 7.7.2 Parallel Bridge Tied Load (PBTL) Configuration With Hybrid Modulation
      3. 7.7.3 Bridge Tied Load (BTL) Configuration Curves with BD Modulation
      4. 7.7.4 Parallel Bridge Tied Load (PBTL) Configuration With BD Modulation
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Power Supplies
      2. 9.3.2 Device Clocking
      3. 9.3.3 Serial Audio Port – Clock Rates
      4. 9.3.4 Clock Halt Auto-Recovery
      5. 9.3.5 Sample Rate on the Fly Change
      6. 9.3.6 Serial Audio Port - Data Formats and Bit Depths
      7. 9.3.7 Digital Audio Processing
      8. 9.3.8 Class D Audio Amplifier
        1. 9.3.8.1 Speaker Amplifier Gain Select
        2. 9.3.8.2 Class D Loop Bandwidth and Switching Frequency Setting
    4. 9.4 Device Functional Modes
      1. 9.4.1 Software Control
      2. 9.4.2 Speaker Amplifier Operating Modes
        1. 9.4.2.1 BTL Mode
        2. 9.4.2.2 PBTL Mode
      3. 9.4.3 Low EMI Modes
        1. 9.4.3.1 Spread Spectrum
        2. 9.4.3.2 Channel to Channel Phase Shift
        3. 9.4.3.3 Multi-Devices PWM Phase Synchronization
          1. 9.4.3.3.1 Phase Synchronization With I2S Clock In Startup Phase
          2. 9.4.3.3.2 Phase Synchronization With GPIO
      4. 9.4.4 Thermal Foldback
      5. 9.4.5 Device State Control
      6. 9.4.6 Device Modulation
        1. 9.4.6.1 BD Modulation
        2. 9.4.6.2 1SPW Modulation
        3. 9.4.6.3 Hybrid Modulation
    5. 9.5 Programming and Control
      1. 9.5.1 I2 C Serial Communication Bus
      2. 9.5.2 I2 C Target Address
        1. 9.5.2.1 Random Write
        2. 9.5.2.2 Sequential Write
        3. 9.5.2.3 Random Read
        4. 9.5.2.4 Sequential Read
        5. 9.5.2.5 DSP Memory Book, Page and BQ update
        6. 9.5.2.6 Checksum
          1. 9.5.2.6.1 Cyclic Redundancy Check (CRC) Checksum
          2. 9.5.2.6.2 Exclusive or (XOR) Checksum
      3. 9.5.3 Control via Software
        1. 9.5.3.1 Startup Procedures
        2. 9.5.3.2 Shutdown Procedures
        3. 9.5.3.3 Protection and Monitoring
          1. 9.5.3.3.1 Overcurrent Limit (Cycle-By-Cycle)
          2. 9.5.3.3.2 Overcurrent Shutdown (OCSD)
          3. 9.5.3.3.3 DC Detect
    6. 9.6 Register Maps
      1. 9.6.1 CONTROL PORT Registers
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Inductor Selections
      2. 10.1.2 Bootstrap Capacitors
      3. 10.1.3 Power Supply Decoupling
      4. 10.1.4 Output EMI Filtering
    2. 10.2 Typical Applications
      1. 10.2.1 2.0 (Stereo BTL) System
      2. 10.2.2 Design Requirements
      3. 10.2.3 Detailed Design procedures
        1. 10.2.3.1 Step One: Hardware Integration
        2. 10.2.3.2 Step Two: Hardware Integration
        3. 10.2.3.3 Step Three: Software Integration
      4. 10.2.4 Application Curves
      5. 10.2.5 MONO (PBTL) Systems
      6. 10.2.6 Advanced 2.1 System (Two TAS5825M Devices)
      7. 10.2.7 Application Curves
    3. 10.3 Power Supply Recommendations
      1. 10.3.1 DVDD Supply
      2. 10.3.2 PVDD Supply
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
        1. 10.4.1.1 General Guidelines for Audio Amplifiers
        2. 10.4.1.2 Importance of PVDD Bypass Capacitor Placement on PVDD Network
        3. 10.4.1.3 Optimizing Thermal Performance
          1. 10.4.1.3.1 Device, Copper, and Component Layout
          2. 10.4.1.3.2 Stencil Pattern
            1. 10.4.1.3.2.1 PCB footprint and Via Arrangement
            2. 10.4.1.3.2.2 Solder Stencil
      2. 10.4.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
      2. 11.1.2 Development Support
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.3.1 Power Supplies

For system design, TAS5825M needs a 3.3-V or 1.8-V supply in addition to the (typical) 12 V or 24 V power-stage supply. Two internal voltage regulators provide good voltage levels for the gate drive circuitry and internal circuitry. The external pins are provided only as a connection point for off-chip bypass capacitors to filter the supply. Connecting external circuitry to these regulator outputs can result in reduced performance and damage to the device. Additionally, all circuitry requiring a floating voltage supply, that is, the high-side gate drive, is accommodated by built-in bootstrap circuitry requiring only a few external capacitors. To provide good electrical and acoustical characteristics, the PWM signal path for the output stage is designed as identical, independent half-bridges. For this reason, each half-bridge has separate bootstrap pins (BST_x). The gate drive voltages (GVDD) are derived from the PVDD voltage. Special attention needs to be paid to placing all decoupling capacitors as close to their associated pins as possible. In general, inductance between the power-supply pins and decoupling capacitors must be avoided. For a properly functioning bootstrap circuit, a small ceramic capacitor must be connected from each bootstrap pin (BST_x) to the power-stage output pin (OUT_x). When the power-stage output is low, the bootstrap capacitor is charged through an internal diode connected between the gate-drive regulator output pin (GVDD) and the bootstrap pin. When the power-stage output is high, the bootstrap capacitor potential is shifted above the output potential and thus provides a good voltage supply for the high-side gate driver.