SLASEH7H October   2019  – January 2023 TAS5825M

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
      1. 7.7.1 Bridge Tied Load (BTL) Configuration Curves with Hybrid Modulation
      2. 7.7.2 Parallel Bridge Tied Load (PBTL) Configuration With Hybrid Modulation
      3. 7.7.3 Bridge Tied Load (BTL) Configuration Curves with BD Modulation
      4. 7.7.4 Parallel Bridge Tied Load (PBTL) Configuration With BD Modulation
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Power Supplies
      2. 9.3.2 Device Clocking
      3. 9.3.3 Serial Audio Port – Clock Rates
      4. 9.3.4 Clock Halt Auto-Recovery
      5. 9.3.5 Sample Rate on the Fly Change
      6. 9.3.6 Serial Audio Port - Data Formats and Bit Depths
      7. 9.3.7 Digital Audio Processing
      8. 9.3.8 Class D Audio Amplifier
        1. 9.3.8.1 Speaker Amplifier Gain Select
        2. 9.3.8.2 Class D Loop Bandwidth and Switching Frequency Setting
    4. 9.4 Device Functional Modes
      1. 9.4.1 Software Control
      2. 9.4.2 Speaker Amplifier Operating Modes
        1. 9.4.2.1 BTL Mode
        2. 9.4.2.2 PBTL Mode
      3. 9.4.3 Low EMI Modes
        1. 9.4.3.1 Spread Spectrum
        2. 9.4.3.2 Channel to Channel Phase Shift
        3. 9.4.3.3 Multi-Devices PWM Phase Synchronization
          1. 9.4.3.3.1 Phase Synchronization With I2S Clock In Startup Phase
          2. 9.4.3.3.2 Phase Synchronization With GPIO
      4. 9.4.4 Thermal Foldback
      5. 9.4.5 Device State Control
      6. 9.4.6 Device Modulation
        1. 9.4.6.1 BD Modulation
        2. 9.4.6.2 1SPW Modulation
        3. 9.4.6.3 Hybrid Modulation
    5. 9.5 Programming and Control
      1. 9.5.1 I2 C Serial Communication Bus
      2. 9.5.2 I2 C Target Address
        1. 9.5.2.1 Random Write
        2. 9.5.2.2 Sequential Write
        3. 9.5.2.3 Random Read
        4. 9.5.2.4 Sequential Read
        5. 9.5.2.5 DSP Memory Book, Page and BQ update
        6. 9.5.2.6 Checksum
          1. 9.5.2.6.1 Cyclic Redundancy Check (CRC) Checksum
          2. 9.5.2.6.2 Exclusive or (XOR) Checksum
      3. 9.5.3 Control via Software
        1. 9.5.3.1 Startup Procedures
        2. 9.5.3.2 Shutdown Procedures
        3. 9.5.3.3 Protection and Monitoring
          1. 9.5.3.3.1 Overcurrent Limit (Cycle-By-Cycle)
          2. 9.5.3.3.2 Overcurrent Shutdown (OCSD)
          3. 9.5.3.3.3 DC Detect
    6. 9.6 Register Maps
      1. 9.6.1 CONTROL PORT Registers
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Inductor Selections
      2. 10.1.2 Bootstrap Capacitors
      3. 10.1.3 Power Supply Decoupling
      4. 10.1.4 Output EMI Filtering
    2. 10.2 Typical Applications
      1. 10.2.1 2.0 (Stereo BTL) System
      2. 10.2.2 Design Requirements
      3. 10.2.3 Detailed Design procedures
        1. 10.2.3.1 Step One: Hardware Integration
        2. 10.2.3.2 Step Two: Hardware Integration
        3. 10.2.3.3 Step Three: Software Integration
      4. 10.2.4 Application Curves
      5. 10.2.5 MONO (PBTL) Systems
      6. 10.2.6 Advanced 2.1 System (Two TAS5825M Devices)
      7. 10.2.7 Application Curves
    3. 10.3 Power Supply Recommendations
      1. 10.3.1 DVDD Supply
      2. 10.3.2 PVDD Supply
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
        1. 10.4.1.1 General Guidelines for Audio Amplifiers
        2. 10.4.1.2 Importance of PVDD Bypass Capacitor Placement on PVDD Network
        3. 10.4.1.3 Optimizing Thermal Performance
          1. 10.4.1.3.1 Device, Copper, and Component Layout
          2. 10.4.1.3.2 Stencil Pattern
            1. 10.4.1.3.2.1 PCB footprint and Via Arrangement
            2. 10.4.1.3.2.2 Solder Stencil
      2. 10.4.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
      2. 11.1.2 Development Support
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.4.1.2 Importance of PVDD Bypass Capacitor Placement on PVDD Network

Placing the bypassing and decoupling capacitors close to supply has long been understood in the industry. This applies to DVDD, AVDD, GVDD and PVDD. However, the capacitors on the PVDD net for the TAS5825M device deserve special attention.

The small bypass capacitors on the PVDD lines of the DUT must be placed as close to the PVDD pins as possible. Not only dose placing these device far away from the pins increase the electromagnetic interference in the system, but doing so can also negatively affect the reliability of the device. Placement of these components too far from the TAS5825M device can cause ringing on the output pins that can cause the voltage on the output pin to exceed the maximum allowable ratings shown in the Absolute Maximum Ratings table, damaging the deice . For that reason, the capacitors on the PVDD net must be no further away from their associated PVDD pins than what is shown in the example layouts in the Section 10.4.2 section.