9 Revision History
Changes from August 19, 2023 to December 13, 2024 (from Revision A (AUGUST 2023) to Revision B (DECEMBER 2024))
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Global: Moved the Revision History section to the back of the documentGo
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Global:: Added "(active-low)" and "O" to the PMIC_WAKE0 and PMIC_WAKE1 signals, where applicable. Left the actual Signal and Ball Names as-is without an "n" suffix.Go
- (Features): Updated/Changed the CSI2.0 bullet and added sub-bulletsGo
- (Pin Attributes): Added more description for each column header in
Pin Attributes Header ListGo
- (Pin Attributes): Added Ball State DURING Reset and Ball State AFTER Reset information for MMC0_* pins in the Pin Attributes (ALZ Package) tableGo
- (VMON Signal Descriptions): Updated/Changed the DESCRIPTION for the VMON2_IR_VCPU signal nameGo
- (Speed Grade Maximum Frequency): Updated/Changed the "VENCDEC" column values for T, N, and H device speeds in the tableGo
- (CSI2/DSI D-PHY Electrical Characteristics): Delete the table and added a compliance specifications NoteGo
- (SERDES Electrical Characteristics): Added USXGMII Note to show compliance with IEEE 802.3 Clause 72-7 and Annex 69BGo
- (ROC for OTP eFuse Programming): Removed legacy PMIC part number
from footnote.Go
- (Recommended Operating Conditions for OTP eFuse Programming): Added the SR(VPP), VPP Power-up Slew Rate parameter to clarify the limit associated with this parameter only applies during power-upGo
- (Combined MCU and Main Domains Power- Up Sequencing): Updated note that
starts with "VDD_MCU is a digital voltage domain …" to clarify VDD_MCU grouping and
sequence constraints.Go
- (Isolated MCU and Main Domains Power-Up Sequencing): Updated note that
starts with "VDD_MCU is a digital voltage domain …" to clarify VDD_MCU grouping and
sequence constraints.Go
- (WKUP_OSC0 Internal Oscillator Clock Source): Updated/Changed the Cshunt, Crystal Circuit Shunt Capacitance content in the WKUP_OSC0 Crystal Electrical Characteristics tableGo
- (WKUP_OSC0 Internal Oscillator Clock Source): Added a footnote to define the MAX ESRxtal, Crystal Effective Series Resistance value based on the Cshunt, Crystal Circuit Shunt Capacitance parameter selectionGo
- (WKUP_OSC0 Switching Characteristics – Crystal Mode [Table]): Updated/Changed the XI, XO, and XI to XO capacitance MAX valuesGo
- (Auxiliary OSC1 Internal Oscillator Clock Source): Updated/Changed the Cshunt, Crystal Circuit Shunt Capacitance content in the OSC1 Crystal Electrical Characteristics tableGo
- (OSC1 Switching Characteristics – Crystal Mode [Table]): Updated/Changed the XI, XO, and XI to XO capacitance MAX table valuesGo
- (GPIO): Updated/Changed the lead-in content with just TRM and Signal Descriptions referencesGo
- (GPIO): Updated/Changed the SRI, Input slew rate, I2C OD FS MAX value from "0.8" to "0.08" V/ns in the GPIO Timing Conditions tabl bbeGo
- (HyperBus): Added the MIN and MAX values for CL, Output
load capacitance in the HyperBus Timing Conditions table, under OUTPUT
CONDITIONSGo
- (I2C Timing): Updated/Changed the typo on the slew rate from "0.8" to "0.08" V/ns (which is equivalent to the stated value of 8E+7) on the rise and fall times of the I2C signals bulletGo
- (MCSPI Timing Requirements - Controller Mode): Updated/Changed the MIN value of SM1, tc(spiclk), Cycle time, SPI_CLK from "20.8" to "20" nsGo
- (MCSPI Switching Characteristics - Peripheral Mode): Updated/Changed the MIN value of SS1, tc(spiclk), Cycle time, SPI_CLK from "20.8" to "20" nsGo
- (MMC0 Timing Requirements – HS400 Mode): Added new table and associated timing imageGo
- (MMC0 Switching Characteristics – HS400 Mode): Replaced the Delay time parameters HS4008 and HS4009 with Output setup and Output hold parameters HS4008, HS4009, HS40010, and HS40011Go
- (eMMC in – HS400 Mode – Transmitter Mode): Updated the timing diagram to match the new definitions associated with parameters HS4008, HS4009, HS40010, and HS40011Go
- (MMC1/2 - SD/SDIO Interface/ UHS–I DDR50 Mode): Updated/Changed the
fop(clk), Operating frequency, MMC[x]_CLK MAX value from "40" to
"50" MHzGo
- (MMC1/2 - SD/SDIO Interface/ UHS–I DDR50 Mode): Updated/Changed the
DDR505, tc(clk), Cycle time, MMC[x]_CLK MIN value from "25" to "20"
nsGo
- (OSPI Timing Conditions): Added Input slew rate 1.8V, PHY Data Training DDR with DQS row to tableGo
- (OSPI Timing Conditions): Updated "3.3V" and "All other modes" mode descriptionGo
- (OSPI0/1 With PHY Data Training): Added new sectionGo
- (OSPI Switching Characteristics – PHY SDR Mode): Corrected the formulas associated with timing parameters O10 and O11Go
- (OSPI Switching Characteristics – PHY DDR Mode): Corrected the formulas associated with timing parameters O4 and O5Go
- (OSPI0/1 Timing Requirements – Tap SDR Mode): Updated/Changed the constant values associated with the Setup time and Hold time MIN formulas in the O19 and O20 parametersGo
- (OSPI0/1 Timing Requirements – Tap SDR Mode): Updated/Changed the R= footnotes "refclk" to "reference clock" to match the clock name used in the Technical Reference Manual (TRM)Go
- (OSPI0/1 Timing Requirements – Tap DDR Mode): Updated/Changed the constant values associated with the Setup time and Hold time MIN formulas in the O13 and O14 parametersGo
- (OSPI0/1 Timing Requirements – Tap DDR Mode): Updated/Changed the R= footnotes "refclk" to "reference clock" to match the clock name used in the Technical Reference Manual (TRM)Go
- (OSPI0/1 Switching Characteristics – Tap DDR Mode): Updated/Changed the data output delay MIN and MAX formulas in the O6 parameter.Go
- (Power Distribution Network Implementation Guidance): Updated/Changed the user's guide doc title and ulink associationGo
- (System Power Supply Monitor Design Guidelines using VMON/POK): Updated/Changed "The VMON2_IR_VCPU pin …" paragraphGo