SPRSP79B February 2023 – December 2023 TDA4AH-Q1 , TDA4AP-Q1 , TDA4VH-Q1 , TDA4VP-Q1
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
Entry into DDR Retention state is accomplished by executing a power down sequence except for the 4 DDR domains that remain energized. Exit from DDR Retention state is accomplished by executing a power up sequence with the 3 DDR domains remaining energized throughout the sequence.