SPRSP79B February 2023 – December 2023 TDA4AH-Q1 , TDA4AP-Q1 , TDA4VH-Q1 , TDA4VP-Q1
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
NO. | PARAMETER | DESCRIPTION | MODE | MIN | MAX | UNIT |
---|---|---|---|---|---|---|
O1 | tc(CLK) | Cycle time, CLK | 1.8V | 19 | ns | |
3.3V | 19 | ns | ||||
O2 | tw(CLKL) | Pulse duration, CLK low | 0.475*P - 0.3 (2) | ns | ||
O3 | tw(CLKH) | Pulse duration, CLK high | 0.475*P - 0.3 (2) | ns | ||
O4 | td(CLK-CSn) | Delay time, CSn active edge to CLK rising edge | 1.8V | 0.475 * P + 0.975 * M * R - 7 (2)(3)(5) | 0.525 * P + 1.025 * M * R + 1(2)(3)(5) | ns |
3.3V | 0.475 * P + 0.975 * M * R - 7(2)(3)(5) | 0.525 * P + 1.025 * M * R + 1(2)(3)(5) | ns | |||
O5 | td(CLK-CSn) | Delay time, CLK rising edge to CSn inactive edge | 1.8V | 0.475 * P + 0.975 * N * R - 7(2)(4)(5) | 0.525 * P + 1.025 * N * R + 1 (2)(4)(5) | ns |
3.3V, OSPI0 DDR TX; 3.3V, OSPI1 DDR TX |
0.475 * P + 0.975 * N * R - 7(2)(4)(5) | 0.525 * P + 1.025 * N * R + 1 (2)(4)(5) | ns | |||
O6 | td(CLK-D) | Delay time, CLK active edge to D[i:0] transition(1) | 1.8V, OSPI0 DDR TX; 1.8V, OSPI1 DDR TX |
–7.71 | –1.56 | ns |
3.3V, OSPI0 DDR TX; 3.3V, OSPI1 DDR TX |
–7.71 | –1.56 | ns |